- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Channel Mode :
25 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,457,980
In-stock
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onsemi | MOSFET 50V 200mA N-Channel | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 200 mA | 3.5 Ohms | Enhancement | |||||
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135,283
In-stock
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onsemi | MOSFET 50V 200mA N-Channel | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 200 mA | 3.5 Ohms | Enhancement | |||||
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1,000
In-stock
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IXYS | MOSFET SMD N-CHANNEL POWER MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 2500 V | 200 mA | 450 Ohms | 4.5 V | 7.4 nC | Enhancement | |||
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89
In-stock
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IXYS | MOSFET 4500V 200mA HV Power MOSFET | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 4500 V | 200 mA | 750 Ohms | 4 V to 6.5 V | 10.4 nC | Enhancement | |||
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2,645
In-stock
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IXYS | MOSFET 0.2 A 500V 30 Rds | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 200 mA | 30 Ohms | - | - | Depletion | |||
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27,642
In-stock
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onsemi | MOSFET NFET 50V 200MA 3.5O | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 200 mA | 5.6 Ohms | 1.5 V | |||||
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11,451
In-stock
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Diodes Incorporated | MOSFET 50V 200mW | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 200 mA | 1.4 Ohms | Enhancement | |||||
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8,786
In-stock
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Diodes Incorporated | MOSFET 50V 200mW | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 50 V | 200 mA | 3.5 Ohms | Enhancement | |||||
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4,005
In-stock
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Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 5 Ohms | Enhancement | |||||
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16,631
In-stock
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Diodes Incorporated | MOSFET 50V N-Ch Enh FET 20Vgss 300Pd 200mA | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 200 mA | 1.4 Ohms | 1.2 V | - | Enhancement | |||
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8,840
In-stock
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Fairchild Semiconductor | MOSFET 0.20A, 50V N-Channel SOT-23 MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 200 mA | 3.5 Ohms | 1.25 V | 0.549 nC | Enhancement | |||
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62,996
In-stock
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Diodes Incorporated | MOSFET 300mW 50V DSS | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 200 mA | 3.5 Ohms | Enhancement | |||||
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2,692
In-stock
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Diodes Incorporated | MOSFET N-Chnl 50V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 200 mA | 1.4 Ohms | Enhancement | |||||
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12,667
In-stock
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Nexperia | MOSFET BSS138AKA/TO-236AB/REEL 7" Q3/ | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 5.5 Ohms | 1.2 V | 0.39 nC | Enhancement | |||
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7,725
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 200mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 5 Ohms | 1.4 V | 1.5 nC | ||||
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238
In-stock
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IXYS | MOSFET 0.2 Amps 500V 30 Rds | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 200 mA | 30 Ohms | - | - | Depletion | |||
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7,608
In-stock
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Infineon Technologies | MOSFET SMALL SIGNALN-CH | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 5 Ohms | 1.3 V | 1 nC | Enhancement | |||
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2,481
In-stock
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Toshiba | MOSFET N-Ch Sm Sig FET Id 0.2A 30V 20V | 20 V | SMD/SMT | SOT-346-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 200 mA | 1.2 Ohms | 1.5 V | ||||||
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9,228
In-stock
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Toshiba | MOSFET Small-signal MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 8.1 Ohms | 1.1 V | 0.27 nC | Enhancement | |||
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VIEW | IXYS | MOSFET 0.2Amps 1200V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 200 mA | 75 Ohms | ||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 60V 200mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 5 Ohms | 1 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET SMOS | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 200 mA | 3.3 Ohms | 2.5 V | Enhancement | ||||
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VIEW | Toshiba | MOSFET Small-signal MOSFET 60V, 150mW | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 2 Ohms | Enhancement | |||||
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VIEW | Toshiba | MOSFET 60V VDSS 20V VGSS 200mA ID 150mW | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 200 mA | 3.3 Ohms | 3.1 V | Enhancement | ||||
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VIEW | Toshiba | MOSFET SS FET N-Ch 0.2A 60V 20V 17pF | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 3.3 Ohms | Enhancement |
