- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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7,332
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8 A | 16 mOhms | PowerTrench | ||||||
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12,500
In-stock
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Vishay Semiconductors | MOSFET 30V 8A 3W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8 A | 0.02 Ohms | 1.5 V | 14.5 nC | Enhancement | TrenchFET | |||
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2,400
In-stock
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onsemi | MOSFET Power MOSFET 30V 100A 8.4 mOhm Single | SMD/SMT | SOIC-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 8 A | 7 mOhms | 25 nC | |||||||||
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3,597
In-stock
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Fairchild Semiconductor | MOSFET 30V Single N-Ch PowerTrench MOSFET | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8 A | 36 mOhms | 3 V | 8.4 nC | PowerTrench | |||||
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755
In-stock
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STMicroelectronics | MOSFET N/P-Ch 30V 8/5 Amp | 16 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 8 A | 22 mOhms | 2.5 V | 7 nC | Enhancement | ||||
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1,760
In-stock
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Vishay Semiconductors | MOSFET 30V 8A 5W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8 A | 0.014 Ohms | 1.5 V | 21 nC | Enhancement | TrenchFET | |||
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2,503
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 SO-8,2.5K | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8 A | 14 mOhms | 8.7 nC | Enhancement | |||||
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1,944
In-stock
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Diodes Incorporated | MOSFET Dual N-Ch DIOFET VDSS 30V VGSS 20V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 8 A | 8.5 mOhms | 30.6 nC | ||||||
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VIEW | onsemi | MOSFET PCH+PCH 4V DRIVE SERIES | 12 V | SMD/SMT | ECH-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 8 A | 20.5 mOhms | |||||||
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690
In-stock
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STMicroelectronics | MOSFET Dual N Ch 30V 0.012Ohm 9A | 16 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 8 A | 22 mOhms | Enhancement | ||||||
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GET PRICE |
8,000
In-stock
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Toshiba | MOSFET N-Ch 30V FET 8A 15W 11nC | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 8 A | 29 mOhms | 11 nC | ||||||||
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GET PRICE |
8,000
In-stock
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Toshiba | MOSFET N-Ch 30V FET 8A 15W 11nC | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 8 A | 29 mOhms | 11 nC |