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Packaging :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Qg - Gate Charge :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
STD11N50M2
1+
$1.650
10+
$1.400
100+
$1.120
500+
$0.981
2500+
$0.757
RFQ
2,167
In-stock
STMicroelectronics MOSFET POWER MOSFET 25 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 500 V 8 A 450 mOhms 2 V 12 nC Enhancement
STD12N65M2
1+
$1.530
10+
$1.310
100+
$1.010
500+
$0.886
2500+
$0.620
RFQ
2,142
In-stock
STMicroelectronics MOSFET POWER MOSFET 25 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 650 V 8 A 420 mOhms 2 V 16.5 nC Enhancement
STF11N50M2
1+
$1.770
10+
$1.500
100+
$1.200
500+
$1.060
RFQ
902
In-stock
STMicroelectronics MOSFET POWER MOSFET 25 V Through Hole TO-220FP-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 550 V 8 A 450 mOhms 2 V 12 nC Enhancement
STF12N65M2
1+
$1.510
10+
$1.280
100+
$1.030
500+
$0.895
RFQ
435
In-stock
STMicroelectronics MOSFET POWER MOSFET 25 V Through Hole TO-220FP-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 8 A 420 mOhms 2 V 16.5 nC Enhancement
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