- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
-
- 0.014 Ohms (1)
- 0.02 Ohms (1)
- 0.0235 Ohms (1)
- 0.025 Ohms (1)
- 0.026 Ohms (3)
- 0.03 Ohms (1)
- 0.05 Ohms (1)
- 1.5 Ohms (1)
- 14 mOhms (1)
- 16 mOhms (1)
- 17.5 mOhms (1)
- 17.8 mOhms (2)
- 19 mOhms (1)
- 20 mOhms (2)
- 20.5 mOhms (1)
- 21 mOhms (1)
- 22 mOhms (3)
- 23 mOhms, 23 mOhms (1)
- 24 mOhms (1)
- 29 mOhms (2)
- 36 mOhms (1)
- 420 mOhms (2)
- 440 mOhms (2)
- 450 mOhms (1)
- 500 mOhms (4)
- 54 mOhms (1)
- 550 mOhms (1)
- 570 mOhms (1)
- 600 mOhms (2)
- 7 mOhms (1)
- 7.9 mOhms (1)
- 8.5 mOhms (1)
- 800 mOhms (3)
- 840 mOhms (2)
- 9.9 mOhms (1)
- 900 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
52 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,462
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 8 A | 440 mOhms | 3 V | 15 nC | Enhancement | |||||
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950
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-263-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 8 A | 550 mOhms | 3 V | 15 nC | Enhancement | |||||
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2,206
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 8 A | 570 mOhms | 3 V | 4 nC | Enhancement | ||||
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250
In-stock
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STMicroelectronics | MOSFET | +/- 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 8 A | 600 mOhms | 3 V | 11 nC | Enhancement | |||||
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6,005
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel PowerTrench MOSFET | SMD/SMT | MLP-12 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel | 60 V | 8 A | 17.5 mOhms | PowerTrench | |||||||
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11,812
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 8A 17.8mOhm 24nC Dual | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel | 60 V | 8 A | 17.8 mOhms | 24 nC | ||||||||
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7,332
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8 A | 16 mOhms | PowerTrench | ||||||
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3,714
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8 A | 19 mOhms | 3.1 V | 13.4 nC | PowerTrench | ||||
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5,356
In-stock
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Fairchild Semiconductor | MOSFET SO-8 N-CH 60V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 8 A | 20 mOhms | Enhancement | PowerTrench | |||||
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6,325
In-stock
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IR / Infineon | MOSFET 60V DUAL N-CH HEXFET 17.8mOhm 24nC | 20 V | SMD/SMT | SO-8 | Tube | 2 Channel | Si | N-Channel | 60 V | 8 A | 17.8 mOhms | 24 nC | ||||||||
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4,193
In-stock
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Vishay Semiconductors | MOSFET 60V 8A 33W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 8 A | 0.05 Ohms | 1.5 V | 12 nC | Enhancement | TrenchFET | |||
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599
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 950 V | 8 A | 800 mOhms | 4 V | 22 nC | Enhancement | ||||
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2,032
In-stock
|
STMicroelectronics | MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 8 A | 600 mOhms | |||||||
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2,167
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 8 A | 450 mOhms | 2 V | 12 nC | Enhancement | ||||
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12,500
In-stock
|
Vishay Semiconductors | MOSFET 30V 8A 3W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8 A | 0.02 Ohms | 1.5 V | 14.5 nC | Enhancement | TrenchFET | |||
|
|
5,255
In-stock
|
Diodes Incorporated | MOSFET FET BVDSS 31V 40V N-Ch 8A 28Vgs 1060pF | 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 8 A | 20 mOhms | 2.4 V | 19.1 nC | Enhancement | ||||
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1,725
In-stock
|
Vishay Semiconductors | MOSFET 60V 8A 39W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 8 A | 0.03 Ohms | 1.5 V | 20 nC | Enhancement | TrenchFET | |||
|
|
2,142
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 8 A | 420 mOhms | 2 V | 16.5 nC | Enhancement | ||||
|
|
2,929
In-stock
|
Siliconix / Vishay | MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 8 A | 0.026 Ohms | 1.5 V | 12.4 nC | Enhancement | TrenchFET | |||
|
|
3,000
In-stock
|
Vishay Semiconductors | MOSFET 20V 8A 18W AEC-Q101 Qualified | +/- 8 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V | 8 A | 0.0235 Ohms | 0.45 V | 14 nC | Enhancement | TrenchFET | |||
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|
2,870
In-stock
|
Vishay Semiconductors | MOSFET 20V 8A 3.6W AEC-Q101 Qualified | +/- 8 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V | 8 A | 0.025 Ohms | 0.4 V | 14 nC | Enhancement | TrenchFET | |||
|
|
2,400
In-stock
|
onsemi | MOSFET Power MOSFET 30V 100A 8.4 mOhm Single | SMD/SMT | SOIC-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 8 A | 7 mOhms | 25 nC | |||||||||
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3,597
In-stock
|
Fairchild Semiconductor | MOSFET 30V Single N-Ch PowerTrench MOSFET | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8 A | 36 mOhms | 3 V | 8.4 nC | PowerTrench | |||||
|
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2,969
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 8 A | 0.026 Ohms | 1.5 V | 13 nC | Enhancement | TrenchFET | |||
|
|
4,896
In-stock
|
Diodes Incorporated | MOSFET MOSFET,N-CHANNEL | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 8 A | 24 mOhms | Enhancement | ||||||
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755
In-stock
|
STMicroelectronics | MOSFET N/P-Ch 30V 8/5 Amp | 16 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 8 A | 22 mOhms | 2.5 V | 7 nC | Enhancement | ||||
|
|
1,760
In-stock
|
Vishay Semiconductors | MOSFET 30V 8A 5W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8 A | 0.014 Ohms | 1.5 V | 21 nC | Enhancement | TrenchFET | |||
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|
2,503
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 SO-8,2.5K | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8 A | 14 mOhms | 8.7 nC | Enhancement | |||||
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|
1,944
In-stock
|
Diodes Incorporated | MOSFET Dual N-Ch DIOFET VDSS 30V VGSS 20V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 8 A | 8.5 mOhms | 30.6 nC | ||||||
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|
160
In-stock
|
IXYS | MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 8 A | 500 mOhms | 3 V | 12 nC | Enhancement |
