- Manufacture :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,462
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 8 A | 440 mOhms | 3 V | 15 nC | Enhancement | |||||
|
|
2,206
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 8 A | 570 mOhms | 3 V | 4 nC | Enhancement | ||||
|
|
3,714
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8 A | 19 mOhms | 3.1 V | 13.4 nC | PowerTrench | ||||
|
|
2,032
In-stock
|
STMicroelectronics | MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 8 A | 600 mOhms | |||||||
|
|
2,167
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 8 A | 450 mOhms | 2 V | 12 nC | Enhancement | ||||
|
|
2,142
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 8 A | 420 mOhms | 2 V | 16.5 nC | Enhancement | ||||
|
|
227
In-stock
|
IXYS | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 8 A | 500 mOhms | 3 V | 12 nC | Enhancement | |||||
|
|
136
In-stock
|
IXYS | MOSFET 700V/8A Ultra Junct X2-Class MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 8 A | 500 mOhms | 3 V | 12 nC | Enhancement | ||||
|
|
1,432
In-stock
|
Toshiba | MOSFET DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 8 A | 420 mOhms | 2.7 V to 3.7 V | 18.5 nC | DTMOSIV | ||||
|
|
1,144
In-stock
|
Toshiba | MOSFET N-Ch MOS 8A 60V 25W 400pF 0.054 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 8 A | 54 mOhms | ||||||||||
|
|
VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 8 A | 440 mOhms | 3 V | 22 nC | Enhancement |