- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,075
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 1.7 mOhms | 1 V | 60 nC | Enhancement | OptiMOS | |||
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2,476
In-stock
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onsemi | MOSFET NFET DPAK 100V 23A 56MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 43 mOhms | 1 V | 35 nC | Enhancement | ||||
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GET PRICE |
21,750
In-stock
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Texas instruments | MOSFET 30V N-Channel NexFET Power MOSFET 8-VSONP -55 to... | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 3.2 mOhms | 1 V | 54 nC | Enhancement | |||
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1,218
In-stock
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Texas instruments | MOSFET 30V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 11.6 mOhms | 1 V | 5.4 nC | Enhancement | ||||
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6,000
In-stock
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Siliconix / Vishay | MOSFET N-Channel 40V PowerPAK ChipFET | + 20 V, - 16 V | SMD/SMT | PowerPAK-ChipFET-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 25 A | 0.00646 Ohms | 1 V | 40 nC | Enhancement |
