- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
-
- 0.00646 Ohms (1)
- 0.018 Ohms (2)
- 0.038 Ohms (1)
- 0.041 Ohms (1)
- 1.7 mOhms (1)
- 100 mOhms (1)
- 11.6 mOhms (1)
- 110 mOhms (2)
- 125 mOhms (1)
- 13 mOhms (1)
- 13.5 mOhms (1)
- 18 mOhms (1)
- 2.2 mOhms (1)
- 2.3 mOhms (1)
- 2.5 mOhms (1)
- 2.8 mOhms (1)
- 3.2 mOhms (1)
- 3.7 mOhms (1)
- 30 mOhms (1)
- 32 mOhms (1)
- 33 mOhms (1)
- 35 mOhms (2)
- 38 mOhms (1)
- 40 mOhms (1)
- 43 mOhms (3)
- 45 mOhms (3)
- 50 mOhms (2)
- 51 mOhms (3)
- 7.9 mOhms (1)
- 75 mOhms (1)
- 8.7 mOhms (1)
- Tradename :
41 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2,702
In-stock
|
Fairchild Semiconductor | MOSFET 30/20V Nch Power Trench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 2.8 mOhms | Enhancement | PowerTrench | ||||||
|
2,460
In-stock
|
Fairchild Semiconductor | MOSFET 100V NCh PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 32 mOhms | 4 V | 53 nC | Enhancement | PowerTrench | ||||
|
4,985
In-stock
|
Fairchild Semiconductor | MOSFET 40V N-Channel Power Trench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 25 A | 2.2 mOhms | Enhancement | PowerTrench | ||||||
|
3,281
In-stock
|
Infineon Technologies | MOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 25 A | 50 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | ||||
|
2,100
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 25 A | 51 mOhms | 2 V | 29 nC | Enhancement | |||||
|
5,075
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 1.7 mOhms | 1 V | 60 nC | Enhancement | OptiMOS | ||||
|
2,261
In-stock
|
STMicroelectronics | MOSFET Nchanl 100V 0027 Ohm typ 25 A Pwr MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 35 mOhms | 4.5 V | 14 nC | ||||||
|
2,156
In-stock
|
STMicroelectronics | MOSFET N Ch 100V 0.033 Ohm 25A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 38 mOhms | Enhancement | |||||||
|
1,153
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 25mA D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 25 A | 110 mOhms | 2.5 V | 70 nC | Enhancement | CoolMOS | ||||
|
1,973
In-stock
|
Vishay Semiconductors | MOSFET 150V 25A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 25 A | 0.038 Ohms | 2.5 V | 51 nC | Enhancement | TrenchFET | ||||
|
3,178
In-stock
|
IR / Infineon | MOSFET 250V 1 N-CH HEXFET 5MM X 6MM PQFN | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 25 A | 100 mOhms | 37 nC | Enhancement | ||||||
|
1,385
In-stock
|
Infineon Technologies | MOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 25 A | 51 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | ||||
|
1,530
In-stock
|
STMicroelectronics | MOSFET N-Ch 100 Volt 25 Amp | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 30 mOhms | Enhancement | |||||||
|
842
In-stock
|
Fairchild Semiconductor | MOSFET 40V N-Channel PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 25 A | 2.3 mOhms | Enhancement | PowerTrench | ||||||
|
977
In-stock
|
Infineon Technologies | MOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 25 A | 51 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | ||||
|
1,879
In-stock
|
STMicroelectronics | MOSFET N-Ch 100 Volt 25 Amp | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 33 mOhms | Enhancement | |||||||
|
2,476
In-stock
|
onsemi | MOSFET NFET DPAK 100V 23A 56MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 43 mOhms | 1 V | 35 nC | Enhancement | |||||
|
1,970
In-stock
|
Vishay Semiconductors | MOSFET 60V 25A 62W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 25 A | 0.018 Ohms | 1.5 V | 50 nC | Enhancement | TrenchFET | ||||
|
1,775
In-stock
|
Fairchild Semiconductor | MOSFET 80/20V 1000A N-chnl PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 25 A | 45 mOhms | 2 V | 14 nC | Enhancement | |||||
|
1,180
In-stock
|
IR / Infineon | MOSFET 55V 1 N-CH HEXFET 37mOhms 13.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 25 A | 43 mOhms | 1 V to 3 V | 13.3 nC | Enhancement | |||||
|
24
In-stock
|
IXYS | MOSFET 25 Amps 800V | 20 V | SMD/SMT | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 25 A | 125 mOhms | 4 V | 180 nC | Enhancement | CoolMOS | ||||
|
2,909
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 13.5 mOhms | 7.1 nC | |||||||||
|
GET PRICE |
21,750
In-stock
|
Texas instruments | MOSFET 30V N-Channel NexFET Power MOSFET 8-VSONP -55 to... | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 3.2 mOhms | 1 V | 54 nC | Enhancement | ||||
|
48,990
In-stock
|
Texas instruments | MOSFET CSD17579Q3A 30 V 8-VSONP | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 8.7 mOhms | 1.1 V | 15 nC | Enhancement | NexFET | ||||
|
860
In-stock
|
Texas instruments | MOSFET 30V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 7.9 mOhms | 1.1 V | 7.9 nC | Enhancement | |||||
|
1,218
In-stock
|
Texas instruments | MOSFET 30V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 11.6 mOhms | 1 V | 5.4 nC | Enhancement | |||||
|
5,994
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel PowerTrench MOSFET | SMD/SMT | Power-56-8 | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 25 A | 2.5 mOhms | PowerTrench | |||||||||
|
5,000
In-stock
|
STMicroelectronics | MOSFET 100 V Mosfet 35 RDS 25A D2PAK | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 35 mOhms | 2.5 V | 38 nC | ||||||
|
2,643
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 45mOhms 22.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 25 A | 45 mOhms | 22.7 nC | Enhancement | ||||||
|
6,000
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 40V PowerPAK ChipFET | + 20 V, - 16 V | SMD/SMT | PowerPAK-ChipFET-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 25 A | 0.00646 Ohms | 1 V | 40 nC | Enhancement |