Build a global manufacturer and supplier trusted trading platform.
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
BSC600N25NS3 G
1+
$2.880
10+
$2.450
100+
$1.960
500+
$1.720
5000+
$1.280
RFQ
3,281
In-stock
Infineon Technologies MOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 250 V 25 A 50 mOhms 2 V 29 nC Enhancement OptiMOS
BSC020N03MS G
1+
$1.390
10+
$1.190
100+
$0.911
500+
$0.805
5000+
$0.564
RFQ
5,075
In-stock
Infineon Technologies MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 30 V 25 A 1.7 mOhms 1 V 60 nC Enhancement OptiMOS
BSC600N25NS3GATMA1
1+
$2.880
10+
$2.450
100+
$1.960
500+
$1.720
5000+
$1.280
VIEW
RFQ
Infineon Technologies MOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 250 V 25 A 50 mOhms 2 V 29 nC Enhancement OptiMOS
Page 1 / 1