- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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184
In-stock
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IXYS | MOSFET HiPERFET Id12 BVdass500 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 500 mOhms | Enhancement | HyperFET | |||||
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125
In-stock
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IXYS | MOSFET DIODE Id12 BVdass800 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 12 A | 850 mOhms | Enhancement | HyperFET | |||||
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11
In-stock
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IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 12 A | 900 mOhms | 3.5 V to 6.5 V | 56 nC | Enhancement | HyperFET | |||
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VIEW | IXYS | MOSFET 1KV 12A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 12 A | 1.05 Ohms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 900V 12A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 12 A | 1.1 Ohms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 12 Amps 1200V 1.3 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 12 A | 1.4 Ohms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 12 Amps 900V 0.9 Ohm Rds | 20 V | Through Hole | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 12 A | 900 mOhms | Enhancement | HyperFET |
