- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
-
- 0.26 Ohms (2)
- 0.37 Ohms (1)
- 1.05 Ohms (3)
- 1.1 Ohms (1)
- 1.3 Ohms (1)
- 1.35 Ohms (1)
- 1.4 Ohms (1)
- 100 mOhms (1)
- 104 mOhms (1)
- 160 mOhms (1)
- 170 mOhms (1)
- 2 Ohms (1)
- 200 mOhms (1)
- 220 mOhms (2)
- 250 mOhms (2)
- 275 mOhms (1)
- 279 mOhms (1)
- 297 mOhms (5)
- 299 mOhms (5)
- 320 mOhms (3)
- 350 mOhms (1)
- 370 mOhms (2)
- 380 mOhms (2)
- 400 mOhms (2)
- 410 mOhms (4)
- 445 mOhms (1)
- 450 mOhms (2)
- 500 mOhms (3)
- 520 mOhms (1)
- 530 mOhms (1)
- 540 mOhms (1)
- 620 mOhms (3)
- 650 mOhms (2)
- 68 mOhms (1)
- 690 mOhms (1)
- 8.7 mOhms (1)
- 84 mOhms (2)
- 850 mOhms (1)
- 900 mOhms (3)
- Vgs th - Gate-Source Threshold Voltage :
69 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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391
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 12 A | 445 mOhms | 3 V | 22 nC | Enhancement | ||||
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496
In-stock
|
STMicroelectronics | MOSFET | +/- 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 12 A | 0.37 Ohms | 3 V | 29 nC | Enhancement | |||||
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1,934
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1.2 kV | 12 A | 620 mOhms | 3 V | 44.2 nC | Enhancement | |||||
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29,660
In-stock
|
Fairchild Semiconductor | MOSFET UNIFET2 600V N-CH MOSFET SINGLE GAGE | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 530 mOhms | 5 V | 34 nC | UniFET | |||||
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25,820
In-stock
|
STMicroelectronics | MOSFET N-Ch 800 V 0.37 Ohm 12 A Zener-protect | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 12 A | 370 mOhms | 4 V | 29 nC | Enhancement | ||||
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967
In-stock
|
STMicroelectronics | MOSFET N-CH 950V 0.41Ohm typ. 12A MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 12 A | 410 mOhms | 4 V | 40 nC | |||||
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1,355
In-stock
|
STMicroelectronics | MOSFET N-Ch 500V 0.246 Ohm 12A Mdmesh 2 PWR MO | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 320 mOhms | 27 nC | Enhancement | |||||
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1,200
In-stock
|
STMicroelectronics | MOSFET N-Ch 800 V 0.37 Ohm 12 A Zener-protect | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 12 A | 370 mOhms | 4 V | 29 nC | Enhancement | ||||
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816
In-stock
|
IXYS | MOSFET 12 Amps 1200V 1.15 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 12 A | 1.35 Ohms | 6.5 V | 103 nC | Enhancement | Polar, HiPerFET | |||
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|
422
In-stock
|
IXYS | MOSFET >1200V High Voltage Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1500 V | 12 A | 2 Ohms | 4.5 V | 106 nC | Enhancement | |||||
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329
In-stock
|
STMicroelectronics | MOSFET N-channel 1200 V, 0.58 Ohm typ., 12 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1200 V | 12 A | 690 mOhms | 3 V to 5 V | 44.2 nC | Enhancement | |||||
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1,196
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 12 A | 450 mOhms | 3 V | 29 nC | Enhancement | ||||
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290
In-stock
|
STMicroelectronics | MOSFET N-channel 1200 V, 0.58 Ohm typ., 12 A Zener-protected MDmesh... | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1.2 kV | 12 A | 620 mOhms | 3 V | 44.2 nC | Enhancement | |||||
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593
In-stock
|
STMicroelectronics | MOSFET N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1.2 kV | 12 A | 620 mOhms | 3 V | 44.2 nC | Enhancement | |||||
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2,943
In-stock
|
Fairchild Semiconductor | MOSFET TO-220AB N-Ch Power | 10 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 12 A | 200 mOhms | Enhancement | ||||||
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2,341
In-stock
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Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 12 A | 170 mOhms | 3 V | 15.3 nC | Enhancement | StrongIRFET | |||
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520
In-stock
|
IXYS | MOSFET 12 Amps 1000V | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 12 A | 1.05 Ohms | 6.5 V | 80 nC | Enhancement | Polar, HiPerFET | |||
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906
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 12A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 220 mOhms | 2.5 V | 35 nC | Enhancement | CoolMOS | |||
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GET PRICE |
37,900
In-stock
|
STMicroelectronics | MOSFET N-Ch 650 Volt 12 Amp | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 12 A | 299 mOhms | Enhancement | |||||
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589
In-stock
|
STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 12 A | 0.26 Ohms | 2 V | 20 nC | Enhancement | |||||
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1,381
In-stock
|
STMicroelectronics | MOSFET N-Ch 60 Volt 12 Amp | 16 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 12 A | 100 mOhms | Enhancement | ||||||
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965
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 12 A | 275 mOhms | 2 V | 20 nC | Enhancement | ||||
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536
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 12A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 220 mOhms | 2.5 V | 35 nC | Enhancement | CoolMOS | |||
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395
In-stock
|
Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 12 A | 84 mOhms | 3 V | 45 nC | Enhancement | CoolMOS | |||
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695
In-stock
|
Fairchild Semiconductor | MOSFET 40V N-CH PowerTrench MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 12 A | 8.7 mOhms | Enhancement | PowerTrench | |||||
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643
In-stock
|
Fairchild Semiconductor | MOSFET 500V N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 540 mOhms | Enhancement | UniFET | |||||
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277
In-stock
|
Fairchild Semiconductor | MOSFET 300V N-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 12 A | 160 mOhms | Enhancement | QFET | |||||
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613
In-stock
|
STMicroelectronics | MOSFET N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 320 mOhms | 2 V to 4 V | 19 nC | Enhancement | ||||
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47
In-stock
|
IXYS | MOSFET 12 Amps 1000V 1.3 Ohms Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 12 A | 1.3 Ohms | Enhancement | ||||||
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504
In-stock
|
onsemi | MOSFET 500V 0.52 OHM TO- 220FP | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 520 mOhms |
