- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Tradename :
21 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,341
In-stock
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Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 12 A | 170 mOhms | 3 V | 15.3 nC | Enhancement | StrongIRFET | |||
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906
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 12A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 220 mOhms | 2.5 V | 35 nC | Enhancement | CoolMOS | |||
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536
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 12A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 220 mOhms | 2.5 V | 35 nC | Enhancement | CoolMOS | |||
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395
In-stock
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Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 12 A | 84 mOhms | 3 V | 45 nC | Enhancement | CoolMOS | |||
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695
In-stock
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Fairchild Semiconductor | MOSFET 40V N-CH PowerTrench MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 12 A | 8.7 mOhms | Enhancement | PowerTrench | |||||
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GET PRICE |
2,000
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 12A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 299 mOhms | 23 nC | Enhancement | CoolMOS | |||
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2,710
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 12A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 250 mOhms | 26 nC | Enhancement | CoolMOS | ||||
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500
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 297 mOhms | 3.5 V | 22 nC | Enhancement | CoolMOS | |||
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230
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 12A TO247-3 CoolMOS CP | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 299 mOhms | Enhancement | CoolMOS | |||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 7A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 297 mOhms | 3.5 V | 22 nC | Enhancement | CoolMOS | |||
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40
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 12A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 299 mOhms | Enhancement | CoolMOS | |||||
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VIEW | Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 297 mOhms | 3.5 V | 22 nC | Enhancement | CoolMOS | |||
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8,000
In-stock
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Fairchild Semiconductor | MOSFET N-Ch PowerTrench | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 12 A | 68 mOhms | Enhancement | PowerTrench | |||||
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VIEW | Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 12 A | 84 mOhms | 3 V | 45 nC | Enhancement | CoolMOS | |||
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VIEW | IXYS | MOSFET 1KV 12A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 12 A | 1.05 Ohms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 900V 12A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 12 A | 1.1 Ohms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 12 Amps 1000V 1.05 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 12 A | 1.05 Ohms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 12 Amps 900V 0.9 Ohm Rds | 20 V | Through Hole | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 12 A | 900 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 12 Amps 900V 0.9 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 12 A | 900 mOhms | Enhancement | ||||||
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194
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 12A TO247-3 CoolMOS CP | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | GaN | N-Channel | 600 V | 12 A | 250 mOhms | Enhancement | CoolMOS | |||||
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129
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 12A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 299 mOhms | 3 V | 23 nC | CoolMOS |
