- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Number of Channels :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,445
In-stock
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Fairchild Semiconductor | MOSFET 20V P-Ch PowerTrench Integrated | 12 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.2 A | 150 mOhms | Enhancement | PowerTrench | |||||
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305
In-stock
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Diodes Incorporated | MOSFET Dual P-Channel | 12 V | SMD/SMT | SOT-26-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 2 A | 150 mOhms | Enhancement | ||||||
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5,340
In-stock
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Diodes Incorporated | MOSFET P-Channel | 12 V | SMD/SMT | DFN1411-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 150 mOhms | Enhancement | ||||||
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5,588
In-stock
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Diodes Incorporated | MOSFET P-Channel .25W | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 150 mOhms | Enhancement | ||||||
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3,268
In-stock
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Diodes Incorporated | MOSFET -20V -860mA | 12 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 860 mA | 150 mOhms | Enhancement | ||||||
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3,900
In-stock
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onsemi | MOSFET PFET SOT563 20V 950MA TR | SMD/SMT | SOT-563-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 950 mA | 150 mOhms | ||||||||||
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3,498
In-stock
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Texas instruments | MOSFET 20V Pch MOSFET | +/- 12 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 104 A | 150 mOhms | - 650 mV | 10.8 nC | Enhancement | ||||
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4,553
In-stock
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Toshiba | MOSFET P-Ch FET RDS 33mohm IDSS -10uA VDS -20V | SMD/SMT | VS6-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.5 A | 150 mOhms | Enhancement | |||||||||
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6,000
In-stock
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Toshiba | MOSFET P-Ch U-MOSVI FET ID -4A -20VDSS 630pF | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 150 mOhms | - 0.3 V to - 1 V | 10.4 nC | |||||
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VIEW | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 U-WLB1015-6 T&R 3K | SMD/SMT | U-WLB1510-6 | Reel | Si | P-Channel | - 20 V | - 2.5 A | 150 mOhms |
