- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
62 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
81
In-stock
|
IXYS | MOSFET 60V/220A TrenchT3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 60 V | 220 A | 4 mOhms | 2 V | 136 nC | Enhancement | HiPerFET | ||||
|
87
In-stock
|
IXYS | MOSFET 60V/220A TrenchT3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 60 V | 220 A | 4 mOhms | 2 V | 136 nC | Enhancement | HiPerFET | ||||
|
5,527
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 4 mOhms | 2 V | 63 nC | Enhancement | |||||
|
368
In-stock
|
IXYS | MOSFET HiperFET Pwr MOSFET 70V, 340A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 70 V | 340 A | 4 mOhms | 4 V | 490 nC | Enhancement | HyperFET | ||||
|
2,920
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 84 A | 4 mOhms | Enhancement | PowerTrench | ||||||
|
1,535
In-stock
|
IR / Infineon | MOSFET MOSFT 30V 200A 3mOhm 75nC Log Lvl | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 200 A | 4 mOhms | 75 nC | |||||||||
|
168
In-stock
|
IXYS | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 310 A | 4 mOhms | HiPerFET | ||||||||
|
1,015
In-stock
|
STMicroelectronics | MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 4 mOhms | 4 V | 65 nC | ||||||
|
3,934
In-stock
|
Infineon Technologies | MOSFET LV POWER MOS | 16 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 82 A | 4 mOhms | 1.2 V | 12 nC | Enhancement | |||||
|
2,662
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 162A 4mOhm 160nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 162 A | 4 mOhms | 160 nC | |||||||||
|
816
In-stock
|
STMicroelectronics | MOSFET 75V 3.5mOhm N-Channel | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 120 A | 4 mOhms | Enhancement | |||||||
|
1,000
In-stock
|
STMicroelectronics | MOSFET N-chanl 80 V 33 mOhm typ 90 A Pwr MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 90 A | 4 mOhms | 4.5 V | 96 nC | Enhancement | |||||
|
2,151
In-stock
|
Fairchild Semiconductor | MOSFET PT7 30/20V Nch PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 42 A | 4 mOhms | PowerTrench SyncFET | |||||||
|
GET PRICE |
68,250
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 162A 4mOhm 160nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 162 A | 4 mOhms | 160 nC | ||||||||
|
752
In-stock
|
Infineon Technologies | MOSFET MOSFT 30V 200A 3mOhm 75nC Log LvlAB | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 200 A | 4 mOhms | 75 nC | |||||||||
|
719
In-stock
|
STMicroelectronics | MOSFET N-Ch 30 Volt 80 Amp | 20 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 4 mOhms | Enhancement | |||||||
|
2,654
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 90A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 90 A | 4 mOhms | Enhancement | OptiMOS | ||||||
|
1,777
In-stock
|
onsemi | MOSFET NFET 30V 117A 4MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 117 A | 4 mOhms | Enhancement | |||||||
|
2,997
In-stock
|
Infineon Technologies | MOSFET MOSFT 20V 100A 4.0mOhm 2.5V dr cpbl | 12 V | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 20 V | 100 A | 4 mOhms | 48 nC | ||||||||||
|
800
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 160A 4mOhm 93.3nC Log Lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 4 mOhms | 3 V | 140 nC | ||||||||
|
1,126
In-stock
|
Infineon Technologies | MOSFET MOSFT 30V 161A 3.3mOhm 34nC Log Lvl | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 161 A | 4 mOhms | 34 nC | |||||||||
|
3,272
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 90A IPAK-3 OptiMOS 3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 90 A | 4 mOhms | Enhancement | OptiMOS | ||||||
|
1,265
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 34nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 161 A | 4 mOhms | 34 nC | Enhancement | ||||||
|
228
In-stock
|
STMicroelectronics | MOSFET 75V 3.5mOhm 120A N-Channel | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 120 A | 4 mOhms | Enhancement | |||||||
|
331
In-stock
|
IR / Infineon | MOSFET 40V 1 N-CH HEXFET 4mOhms 160nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 162 A | 4 mOhms | 160 nC | Enhancement | ||||||
|
1,061
In-stock
|
onsemi | MOSFET NFET SO8FL 30V | SMD/SMT | SO-FL-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 19.5 A | 4 mOhms | 43 nC | ||||||||||
|
147
In-stock
|
Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 202 A | 4 mOhms | 131 nC | Enhancement | |||||||
|
876
In-stock
|
IR / Infineon | MOSFET 20V 1 N-CH HEXFET 4mOhms 48nC | 12 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 20 V | 100 A | 4 mOhms | 48 nC | |||||||||
|
571
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 70A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 70 A | 4 mOhms | 2 V | 41 nC | Enhancement | OptiMOS | ||||
|
677
In-stock
|
IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 110 A | 4 mOhms | 2.1 V | 130 nC | Enhancement | StrongIRFET |