- Manufacture :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
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7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,015
In-stock
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STMicroelectronics | MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 4 mOhms | 4 V | 65 nC | |||||
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816
In-stock
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STMicroelectronics | MOSFET 75V 3.5mOhm N-Channel | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 120 A | 4 mOhms | Enhancement | ||||||
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331
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET 4mOhms 160nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 162 A | 4 mOhms | 160 nC | Enhancement | |||||
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62
In-stock
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IXYS | MOSFET 60V/220A TrenchT3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 60 V | 220 A | 4 mOhms | 2 V | 136 nC | Enhancement | HiPerFET | |||
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VIEW | STMicroelectronics | MOSFET N-Ch 30 Volt 80 Amp | 20 V | SMD/SMT | TO-263-3 | - 65 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 4 mOhms | Enhancement | ||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 40V 3.1 Ohm STripFET VI DeepGATE | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 4 mOhms | 1 V to 2.5 V | 80 nC | |||||
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40
In-stock
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IR / Infineon | MOSFET 60V 1 N-CH HEXFET 4mOhms 160nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 162 A | 4 mOhms | 160 nC | Enhancement |