- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
25 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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17,767
In-stock
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onsemi | MOSFET NFET DPAK 60V 18A 43 MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 39 mOhms | 15 nC | ||||||
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7,990
In-stock
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IR / Infineon | MOSFET MOSFT 100V 5.4A 39mOhm 37nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 5.4 A | 39 mOhms | 37 nC | ||||||||
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276
In-stock
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IXYS | MOSFET 500V 132A 0.039Ohm PolarP3 Power MOSFET | 30 V | Through Hole | PLUS-264-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 132 A | 39 mOhms | 5 V | 250 nC | HyperFET | ||||||
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1,769
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 43.5 A | 39 mOhms | Enhancement | QFET | |||||
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1,791
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel QFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 43.5 A | 39 mOhms | Enhancement | ||||||
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5,820
In-stock
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onsemi | MOSFET NFET 60V 18A 43MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 22 A | 39 mOhms | 15 nC | ||||||
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1,719
In-stock
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Infineon Technologies | MOSFET 100V SINGLE N-CH 39mOhms 37nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 31 A | 39 mOhms | 2 V to 4 V | 37 nC | Enhancement | ||||
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1,192
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 39mOhms 37nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 31 A | 39 mOhms | 4 V | 37 nC | Enhancement | ||||
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303
In-stock
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Fairchild Semiconductor | MOSFET Trans MOS N-Ch 100V 48A 3-Pin 3+Tab | 25 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 48 A | 39 mOhms | Enhancement | ||||||
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32
In-stock
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IXYS | MOSFET 500V 112A 0.039Ohm PolarP3 Power MOSFET | 30 V | Chassis Mount | SOT-227-4 | Tube | 1 Channel | Si | N-Channel | 500 V | 112 A | 39 mOhms | 5 V | 250 nC | HyperFET | ||||||
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919
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 39mOhms 37nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 5.4 A | 39 mOhms | 37 nC | Enhancement | |||||
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630
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 31A 39mOhm 37nC | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 31 A | 39 mOhms | 37 nC | ||||||||
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181
In-stock
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IXYS | MOSFET 32 Amps 50V 0.036 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 50 V | - 32 A | 39 mOhms | - 4.5 V | 46 nC | Enhancement | TrenchP | |||
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355
In-stock
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IXYS | MOSFET 32 Amps 50V 0.036 Rds | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 50 V | - 32 A | 39 mOhms | Enhancement | ||||||
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60
In-stock
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IXYS | MOSFET 76 Amps 250V 39 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 76 A | 39 mOhms | Enhancement | ||||||
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1,250
In-stock
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onsemi | MOSFET Pwr MOSFET 60V 17A 39mOhmDual N-CH | SMD/SMT | DFN-5x6-8 | Reel | 2 Channel | Si | N-Channel | 60 V | 17 A | 39 mOhms | ||||||||||
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28
In-stock
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IXYS | MOSFET TrenchP Power MOSFET | SMD/SMT | TO-252-3 | Tube | Si | P-Channel | - 50 V | - 32 A | 39 mOhms | |||||||||||
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25
In-stock
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IXYS | MOSFET 76 Amps 250V 39 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 76 A | 39 mOhms | Enhancement | ||||||
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5,000
In-stock
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onsemi | MOSFET 60V 20A N-Channel | 15 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 39 mOhms | Enhancement | ||||||
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5,000
In-stock
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onsemi | MOSFET NFET SO8FL 60V 17A 39MOHM | SMD/SMT | DFN-5x6-8 | Reel | 2 Channel | Si | N-Channel | 60 V | 17 A | 39 mOhms | ||||||||||
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VIEW | onsemi | MOSFET T4S PCH 20/8V IN 1.6X1.6 | SMD/SMT | uDFN-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.2 A | 39 mOhms | ||||||||||
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VIEW | onsemi | MOSFET PCH+PCH 4V DRIVE SERIES | SMD/SMT | ECH-8 | Reel | 2 Channel | Si | P-Channel | - 30 V | - 5.5 A | 39 mOhms | ||||||||||
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VIEW | onsemi | MOSFET T4S PCH 20/8V IN 1.6X1.6 | SMD/SMT | uDFN-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.2 A | 39 mOhms | ||||||||||
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2,490
In-stock
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onsemi | MOSFET NCH+NCH 4.5V DRIVE SERIES | SMD/SMT | SOIC-8 | Reel | 2 Channel | Si | N-Channel | 35 V | 6 A | 39 mOhms | ||||||||||
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508
In-stock
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Texas instruments | MOSFET Dual P-Channel Nex FET Power MOSFET | 8 V | SMD/SMT | DSBGA-12 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 4.5 A | 39 mOhms | NexFET |
