- Manufacture :
- Mounting Style :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Tradename :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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17,767
In-stock
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onsemi | MOSFET NFET DPAK 60V 18A 43 MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 39 mOhms | 15 nC | ||||||
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919
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 39mOhms 37nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 5.4 A | 39 mOhms | 37 nC | Enhancement | |||||
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181
In-stock
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IXYS | MOSFET 32 Amps 50V 0.036 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 50 V | - 32 A | 39 mOhms | - 4.5 V | 46 nC | Enhancement | TrenchP | |||
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355
In-stock
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IXYS | MOSFET 32 Amps 50V 0.036 Rds | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 50 V | - 32 A | 39 mOhms | Enhancement | ||||||
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60
In-stock
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IXYS | MOSFET 76 Amps 250V 39 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 76 A | 39 mOhms | Enhancement | ||||||
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25
In-stock
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IXYS | MOSFET 76 Amps 250V 39 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 76 A | 39 mOhms | Enhancement | ||||||
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508
In-stock
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Texas instruments | MOSFET Dual P-Channel Nex FET Power MOSFET | 8 V | SMD/SMT | DSBGA-12 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 4.5 A | 39 mOhms | NexFET |
