- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Packaging :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
41 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Fall Time | Package | Factory Pack Quantity | RoHS | |
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GET PRICE |
46,000
In-stock
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STMicroelectronics | MOSFET N-channel 600 V, 85 mOhm typ 30 A MDmesh M6 Power MOSFE... | - 25 V, + 25 V | Tape & Reel (TR) | 208 W | N-Channel | 600 V | 30 A | 85 mOhms | 3.25 V | 44.3 nC | 7.3 ns | D2PAK-3 | 1000 | Green available | ||||||||||
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2,483
In-stock
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IXYS | MOSFET -48.0 Amps -200V 0.085 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 48 A | 85 mOhms | - 4 V | 103 nC | Enhancement | PolarP | ||||||||
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38,396
In-stock
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Fairchild Semiconductor | MOSFET SOT-23 N-CH LOGIC | 20 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.7 A | 85 mOhms | Enhancement | |||||||||||
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10,919
In-stock
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onsemi | MOSFET NFET SOT23 30V 2A 0.110R | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.5 A | 85 mOhms | 3.6 nC | |||||||||||
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300
In-stock
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IXYS | MOSFET 64.0 Amps 500 V 0.09 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 64 A | 85 mOhms | 5.5 V | 150 nC | Enhancement | PolarHV, HiPerFET | ||||||||
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3,113
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 17A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 17 A | 85 mOhms | 2 V | 19 nC | Enhancement | |||||||||
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4,278
In-stock
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onsemi | MOSFET 30V 3.05A P-Channel | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 3.05 A | 85 mOhms | Enhancement | |||||||||||
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2,889
In-stock
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Diodes Incorporated | MOSFET P-Chan 60V MOSFET (UMOS) | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 8.2 A | 85 mOhms | - 1 V | 12.1 nC | Enhancement | |||||||||
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2,070
In-stock
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onsemi | MOSFET NCH 4V DRIVE SERIES | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 17 A | 85 mOhms | 19 nC | |||||||||||
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427
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 85 mOhms | 3 V | 42 nC | Enhancement | CoolMOS | ||||||||
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1,994
In-stock
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onsemi | MOSFET PFET SO8 30V 3A 85 MOHM | SMD/SMT | SOIC-8 | Reel | Si | P-Channel | - 30 V | - 3.05 A | 85 mOhms | ||||||||||||||||
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60
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/64A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 64 A | 85 mOhms | 145 nC | HyperFET | ||||||||||||
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1,695
In-stock
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Fairchild Semiconductor | MOSFET -20V P-Ch 1.5 V PowerTrench | 8 V | SMD/SMT | WLCSP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 85 mOhms | Enhancement | PowerTrench | ||||||||||
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GET PRICE |
1,937,000
In-stock
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onsemi | MOSFET NFET SOT23 20V 2.8A 85mOhm | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.8 A | 85 mOhms | Enhancement | ||||||||||
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5,654
In-stock
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Diodes Incorporated | MOSFET 30V P-CH MOSFET | 12 V | SMD/SMT | SC-59-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3 A | 85 mOhms | - 1.3 V | 11.6 nC | Enhancement | |||||||||
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503
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 17A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 17 A | 85 mOhms | 2 V | 19 nC | Enhancement | |||||||||
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28
In-stock
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IXYS | MOSFET 500V 64A | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 64 A | 85 mOhms | Enhancement | HyperFET | ||||||||||
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26
In-stock
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IXYS | MOSFET 500V 64A | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 61 A | 85 mOhms | Enhancement | HyperFET | ||||||||||
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907
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 17A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 17 A | 85 mOhms | 2 V | 19 nC | Enhancement | |||||||||
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6,965
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 12Vgss 465pF 5.5nC | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 85 mOhms | 1.5 V | 11.7 nC | Enhancement | PowerDI | ||||||||
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25
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/64A | 30 V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 64 A | 85 mOhms | 145 nC | HyperFET | ||||||||||||
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769
In-stock
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Infineon Technologies | MOSFET Aud MOSFT 200V 18A 105mOhm 18nC Qg | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 18 A | 85 mOhms | 4.9 V | 29 nC | ||||||||||||
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40
In-stock
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IXYS | MOSFET -48.0 Amps -200V 0.085 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 48 A | 85 mOhms | Enhancement | |||||||||||
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162
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 85 mOhms | 3 V | 42 nC | Enhancement | CoolMOS | ||||||||
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2,710
In-stock
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Nexperia | MOSFET 30V P-channel MOSFET | 12 V | SMD/SMT | DFN2020-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.4 A | 85 mOhms | - 1 V | 7.8 nC | Enhancement | |||||||||
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1,012
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Fet w/Int Schottky -20Vbr 20Vr | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.3 A | 85 mOhms | - 1.5 V | 7.8 nC | Enhancement | |||||||||
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29
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 500 V | 56 A | 85 mOhms | 4 V | 220 nC | Enhancement | POWER MOS 8 | |||||||||
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42
In-stock
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Microsemi | MOSFET Power MOSFET - MOS5 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 300 V | 40 A | 85 mOhms | 4 V | 130 nC | Enhancement | Power MOS V | |||||||||
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23
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 500 V | 56 A | 85 mOhms | 4 V | 220 nC | Enhancement | POWER MOS 8 | |||||||||
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7,292
In-stock
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Fairchild Semiconductor | MOSFET 300V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 38.4 A | 85 mOhms | Enhancement |
