- Vgs - Gate-Source Voltage :
- Mounting Style :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
11 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,483
In-stock
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IXYS | MOSFET -48.0 Amps -200V 0.085 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 48 A | 85 mOhms | - 4 V | 103 nC | Enhancement | PolarP | |||
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4,278
In-stock
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onsemi | MOSFET 30V 3.05A P-Channel | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 3.05 A | 85 mOhms | Enhancement | ||||||
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2,889
In-stock
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Diodes Incorporated | MOSFET P-Chan 60V MOSFET (UMOS) | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 8.2 A | 85 mOhms | - 1 V | 12.1 nC | Enhancement | ||||
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1,994
In-stock
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onsemi | MOSFET PFET SO8 30V 3A 85 MOHM | SMD/SMT | SOIC-8 | Reel | Si | P-Channel | - 30 V | - 3.05 A | 85 mOhms | |||||||||||
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1,695
In-stock
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Fairchild Semiconductor | MOSFET -20V P-Ch 1.5 V PowerTrench | 8 V | SMD/SMT | WLCSP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 85 mOhms | Enhancement | PowerTrench | |||||
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5,654
In-stock
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Diodes Incorporated | MOSFET 30V P-CH MOSFET | 12 V | SMD/SMT | SC-59-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3 A | 85 mOhms | - 1.3 V | 11.6 nC | Enhancement | ||||
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40
In-stock
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IXYS | MOSFET -48.0 Amps -200V 0.085 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 48 A | 85 mOhms | Enhancement | ||||||
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2,710
In-stock
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Nexperia | MOSFET 30V P-channel MOSFET | 12 V | SMD/SMT | DFN2020-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.4 A | 85 mOhms | - 1 V | 7.8 nC | Enhancement | ||||
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1,012
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Fet w/Int Schottky -20Vbr 20Vr | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.3 A | 85 mOhms | - 1.5 V | 7.8 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET N-Ch -20V FET 690pF -5A 2.2W | VS6-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5 A | 85 mOhms | |||||||||||
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5,820
In-stock
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onsemi | MOSFET | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.5 A | 85 mOhms | 7.3 nC |
