- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
22 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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45
In-stock
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IXYS | MOSFET 850V/90A Ultra Junction X-Class | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 90 A | 41 mOhms | 3.5 V | 340 nC | Enhancement | HiPerFET | ||||
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10
In-stock
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IXYS | MOSFET 850V/90A Ultra Junction X-Class | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 90 A | 41 mOhms | 3.5 V | 340 nC | Enhancement | HiPerFET | ||||
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4,280
In-stock
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Fairchild Semiconductor | MOSFET 150 N-CH PwrTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 150 V | 5 A | 41 mOhms | 3.1 V | 11.3 nC | PowerTrench | |||||||
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364
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 41mohm | 20 V | Through Hole | TO-247-3 | - 50 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 77 A | 41 mOhms | 2.5 V to 3.5 V | 285 nC | SuperFET II | |||||
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5,600
In-stock
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Fairchild Semiconductor | MOSFET 650V 76A NChn MOSFET SuperFET II, FRFET | 20 V, 30 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 76 A | 41 mOhms | 3 V | 229 nC | Enhancement | SuperFET II UniFET FRFET | ||||
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23,701
In-stock
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Infineon Technologies | MOSFET MOSFT 25V 5.8A 24mOhm 5.4 Qg | 20 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 25 V | 5.8 A | 41 mOhms | 5.4 nC | |||||||||
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21,735
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 2.3A SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.3 A | 41 mOhms | 550 mV | 1.7 nC | Enhancement | |||||
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6,383
In-stock
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 40V P-CHANNEL | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 10.5 A | 41 mOhms | - 3 V | 14 nC | Enhancement | |||||
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1,018
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 61 A | 41 mOhms | Enhancement | |||||||
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597
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Channel MOSFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 69 A | 41 mOhms | Enhancement | |||||||
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152
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 650V, 44 mOhm, FRFET | 20 V, 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 76 A | 41 mOhms | 5 V | 226 nC | Enhancement | SuperFET II | ||||
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2,475
In-stock
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Fairchild Semiconductor | MOSFET UltraFET Power MOSFET | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 20 A | 41 mOhms | 1.6 V | 39 nC | ||||||
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6,454
In-stock
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Diodes Incorporated | MOSFET 12V N-Ch Enh Mode FET 8Vgss 0.68W | 8 V | SMD/SMT | SC-59-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 9.3 A | 41 mOhms | 0.53 V | 50.6 nC | Enhancement | |||||
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5,012
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 2.3A SOT-23-3 | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.3 A | 41 mOhms | 300 mV | 1.7 nC | Enhancement | |||||
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5,165
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 2.3A SOT-23-3 | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.3 A | 41 mOhms | 300 mV | 1.7 nC | Enhancement | |||||
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617
In-stock
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Diodes Incorporated | MOSFET 12V N-Ch Enh FET 2426pF 27.3nC | 4.5 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 9.3 A | 41 mOhms | 0.53 V | 27.3 nC | Enhancement | |||||
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1,596
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 2.3A SOT-23-3 | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.3 A | 41 mOhms | 300 mV | 1.7 nC | Enhancement | |||||
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1,559
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 2.3A SOT-23-3 | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.3 A | 41 mOhms | 300 mV | 1.7 nC | Enhancement | |||||
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1,346
In-stock
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Fairchild Semiconductor | MOSFET P-Ch LL FET Enhancement Mode | 8 V | SMD/SMT | TO-263-3 | - 65 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 24 A | 41 mOhms | Enhancement | |||||||
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2,500
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh FET 25mOhm -16.1A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 16.1 A | 41 mOhms | - 3 V | 16.5 nC | Enhancement | |||||
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VIEW | Nexperia | MOSFET PMN42XPE/SC-74/REEL 7" Q1/T1 * | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.7 A | 41 mOhms | - 1 V | 11.5 nC | Enhancement | ||||||
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371
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 46A Auto 0.041 Ohm MDMesh M5 | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 710 V | 46 A | 41 mOhms | 4 V | 142 nC |