- Manufacture :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
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7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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23,701
In-stock
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Infineon Technologies | MOSFET MOSFT 25V 5.8A 24mOhm 5.4 Qg | 20 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 25 V | 5.8 A | 41 mOhms | 5.4 nC | ||||||||
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21,735
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 2.3A SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.3 A | 41 mOhms | 550 mV | 1.7 nC | Enhancement | ||||
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5,012
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 2.3A SOT-23-3 | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.3 A | 41 mOhms | 300 mV | 1.7 nC | Enhancement | ||||
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5,165
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 2.3A SOT-23-3 | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.3 A | 41 mOhms | 300 mV | 1.7 nC | Enhancement | ||||
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617
In-stock
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Diodes Incorporated | MOSFET 12V N-Ch Enh FET 2426pF 27.3nC | 4.5 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 9.3 A | 41 mOhms | 0.53 V | 27.3 nC | Enhancement | ||||
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1,596
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 2.3A SOT-23-3 | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.3 A | 41 mOhms | 300 mV | 1.7 nC | Enhancement | ||||
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1,559
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 2.3A SOT-23-3 | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.3 A | 41 mOhms | 300 mV | 1.7 nC | Enhancement |