- Manufacture :
- Package / Case :
- Id - Continuous Drain Current :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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17,026
In-stock
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IR / Infineon | MOSFET P-CHANNEL -20V -6.9A 32mOhm -2.5V capable | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6.9 A | 55 mOhms | |||||||
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14,247
In-stock
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Nexperia | MOSFET P-CH -20 V -3.5 A | SMD/SMT | SOT-23-3 | Reel | Si | P-Channel | - 20 V | - 3.5 A | 55 mOhms | 11 nC | |||||||||
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1,954
In-stock
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Nexperia | MOSFET P-CH -20 V -4.1 A | SMD/SMT | TSOP-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.1 A | 55 mOhms | 13 nC | ||||||||
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80
In-stock
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onsemi | MOSFET 20V 4.2A 60MOHM PFET | +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 55 mOhms | - 1.2 V | 10 nC | Enhancement |
