- Mounting Style :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
14,172
In-stock
|
STMicroelectronics | MOSFET N-Ch 100 Volt 24 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 26 A | 55 mOhms | Enhancement | ||||||
|
|
13,287
In-stock
|
Fairchild Semiconductor | MOSFET 60V/-60V N/P | 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V | 4.5 A | 55 mOhms | Enhancement | PowerTrench | |||||
|
|
1,498
In-stock
|
Infineon Technologies | MOSFET 200V SINGLE N-CH 55mOhms 91nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 44 A | 55 mOhms | 5.5 V | 91 nC | Enhancement | ||||
|
|
1,600
In-stock
|
Fairchild Semiconductor | MOSFET 60V P-Channel QFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 27 A | 55 mOhms | Enhancement | ||||||
|
|
2,500
In-stock
|
onsemi | MOSFET NFET DPAK 100V 23A 55MOHM | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | Si | N-Channel | 100 V | 80 A | 55 mOhms |
