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Manufacture :
Vds - Drain-Source Breakdown Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Channel Mode
TK6A50D(STA4,Q,M)
1+
$1.380
10+
$1.100
100+
$0.851
500+
$0.752
VIEW
RFQ
Toshiba MOSFET N-Ch MOS 6A 500V 35W 540pF 1.4 Ohm   Through Hole TO-220FP-3       1 Channel Si N-Channel 500 V 6 A 1.4 Ohms  
IXTH6N90A
30+
$8.250
120+
$7.160
270+
$6.840
510+
$6.240
VIEW
RFQ
IXYS MOSFET 6 Amps 900V 1.4 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 900 V 6 A 1.4 Ohms Enhancement
IXTH6N80A
30+
$8.700
120+
$7.550
270+
$7.210
510+
$6.580
VIEW
RFQ
IXYS MOSFET 6 Amps 800 V 1.4 W Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 6 A 1.4 Ohms Enhancement
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