- Mounting Style :
- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Applied Filters :
63 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
435
In-stock
|
Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.4 Ohms | 3 V | 10 nC | Enhancement | CoolMOS | ||||
|
|
488
In-stock
|
Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.4 Ohms | 3 V | 10 nC | Enhancement | CoolMOS | ||||
|
|
346
In-stock
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.4 Ohms | 3 V | 10 nC | Enhancement | CoolMOS | ||||
|
|
494
In-stock
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-251-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.4 Ohms | 3 V | 10 nC | Enhancement | CoolMOS | ||||
|
|
325
In-stock
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-251-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.4 Ohms | 3 V | 10 nC | Enhancement | CoolMOS | ||||
|
|
33,217
In-stock
|
Infineon Technologies | MOSFET P-Ch SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 330 mA | 1.4 Ohms | - 2 V | 3.57 nC | Enhancement | ||||
|
|
4,468
In-stock
|
Fairchild Semiconductor | MOSFET 200V P-Channel QFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 3.7 A | 1.4 Ohms | Enhancement | ||||||
|
|
4,814
In-stock
|
Fairchild Semiconductor | MOSFET 500V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 5 A | 1.4 Ohms | Enhancement | ||||||
|
|
5,037
In-stock
|
Fairchild Semiconductor | MOSFET 500V,4.0A NCH MOSFET | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 4 A | 1.4 Ohms | ||||||||||
|
|
941
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 4 A | 1.4 Ohms | 3 V | 17 nC | Enhancement | ||||
|
|
25,096
In-stock
|
Nexperia | MOSFET 30V 350 MA N-CH TRENCH MOSFET | 8 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 350 mA | 1.4 Ohms | 0.9 V | 0.52 nC | |||||
|
|
11,451
In-stock
|
Diodes Incorporated | MOSFET 50V 200mW | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 200 mA | 1.4 Ohms | Enhancement | ||||||
|
|
4,492
In-stock
|
Fairchild Semiconductor | MOSFET 200V N-Ch QFET Logic Level | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 3 A | 1.4 Ohms | Enhancement | ||||||
|
|
3,912
In-stock
|
Fairchild Semiconductor | MOSFET 200V P-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 3.7 A | 1.4 Ohms | Enhancement | ||||||
|
|
23,460
In-stock
|
Fairchild Semiconductor | MOSFET UniFET 500V 4A | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 4 A | 1.4 Ohms | Enhancement | ||||||
|
|
1,595
In-stock
|
Fairchild Semiconductor | MOSFET 500V N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 5 A | 1.4 Ohms | Enhancement | UniFET | |||||
|
|
1,021
In-stock
|
Fairchild Semiconductor | MOSFET 900V N-Chan Advance Q-FET C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 8 A | 1.4 Ohms | Enhancement | ||||||
|
|
1,049
In-stock
|
Fairchild Semiconductor | MOSFET 900V N-Channel Adv Q-FET C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 8 A | 1.4 Ohms | Enhancement | QFET | |||||
|
|
2,602
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 3.2A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3.2 A | 1.4 Ohms | Enhancement | CoolMOS | |||||
|
|
1,620
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 3.5 A | 1.4 Ohms | 3 V | 8.5 nC | Enhancement | ||||
|
|
4,596
In-stock
|
onsemi | MOSFET NFET WDFN6 30V 1.4 Ohms | 10 V | SMD/SMT | WDFN-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 245 mA | 1.4 Ohms | 0.75 nC | ||||||
|
|
16,631
In-stock
|
Diodes Incorporated | MOSFET 50V N-Ch Enh FET 20Vgss 300Pd 200mA | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 200 mA | 1.4 Ohms | 1.2 V | - | Enhancement | ||||
|
|
2,692
In-stock
|
Diodes Incorporated | MOSFET N-Chnl 50V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 200 mA | 1.4 Ohms | Enhancement | ||||||
|
|
789
In-stock
|
Fairchild Semiconductor | MOSFET 500V N-Channel Adv Q-FET C-Series | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 5 A | 1.4 Ohms | Enhancement | QFET | |||||
|
|
1,181
In-stock
|
Fairchild Semiconductor | MOSFET 200V P-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 3.4 A | 1.4 Ohms | Enhancement | QFET | |||||
|
|
793
In-stock
|
Fairchild Semiconductor | MOSFET 650V N-Channel Adv Q-FET C-Series | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 1.4 Ohms | Enhancement | QFET | |||||
|
|
GET PRICE |
3,070
In-stock
|
Fairchild Semiconductor | MOSFET 900V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 11 A | 1.4 Ohms | Enhancement | QFET | ||||
|
|
8,650
In-stock
|
Nexperia | MOSFET 30V 400 MA N-CH TRENCH MOSFET | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 400 mA | 1.4 Ohms | |||||||
|
|
10,312
In-stock
|
Infineon Technologies | MOSFET P-Ch SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 330 mA | 1.4 Ohms | - 2 V | 3.57 nC | Enhancement | ||||
|
|
5,961
In-stock
|
Nexperia | MOSFET 30V 350 MA DUAL N-CH TRENCH MOSFET | 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 350 mA | 1.4 Ohms | Enhancement |
