- Manufacture :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,000
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 31V~40V SO-8 T&R 2.5K | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 8.6 A, 8.6 A | 10 mOhms, 10 mOhms | 1 V, 1 V | 33 nC, 33 nC | Enhancement | ||||
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2,610
In-stock
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Siliconix / Vishay | MOSFET Dual N Ch 12V Vds AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 12 V, 12 V | 20 A, 60 A | 0.0052 Ohms, 0.0025 Ohms | 1 V, 1 V | 22 nC, 54 nC | Enhancement | TrenchFET | |||
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2,923
In-stock
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Siliconix / Vishay | MOSFET Dual N Ch 20V Vds AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 20 A, 60 A | 0.0074 Ohms, 0.0031 Ohms | 1 V, 1 V | 18 nC, 43 nC | Enhancement | TrenchFET | |||
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VIEW | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | N-Channel | 60 V, 60 V | 7.6 A, 7.6 A | 15 mOhms, 15 mOhms | 1 V, 1 V | 17 nC, 17 nC | Enhancement |
