- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
26,850
In-stock
|
Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 16 A | 51 mOhms | 2.8 V | 6.1 nC | PowerTrench | |||||
|
770
In-stock
|
Fairchild Semiconductor | MOSFET N-Ch Power Trench MOSFET 150V 169A | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 169 A | 5 mOhms | 2.8 V | 70 nC | PowerTrench | |||||
|
2,479
In-stock
|
Fairchild Semiconductor | MOSFET PT5 100V LL ZENER 150MOHM GRN COMPOUND | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 6.8 A | 175 mOhms | 2.8 V | 3.61 nC | PowerTrench | ||||||
|
17,914
In-stock
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 1 A | 190 mOhms | 2.8 V | 2 nC | Enhancement | |||||
|
8,730
In-stock
|
Texas instruments | MOSFET 100V, 49mOhm SON2x2 NexFET Power MOSFET 6-WSON ... | 20 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 58 mOhms | 2.8 V | 5.6 nC | Enhancement | NexFET | ||||
|
1,680
In-stock
|
Texas instruments | MOSFET 60V NCh NexFET Power MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.5 mOhms | 2.8 V | 49 nC | NexFET | |||||
|
GET PRICE |
14,850
In-stock
|
Texas instruments | MOSFET 100V, NCh NexFET | 2.8 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 14.1 mOhms | 2.8 V | 17 nC | Enhancement | ||||
|
4,000
In-stock
|
IR / Infineon | MOSFET 40V N-Ch 270A 1.0 mOhm 220nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 270 A | 700 uOhms | 2.8 V | 220 nC | Directfet | |||||
|
7,000
In-stock
|
Fairchild Semiconductor | MOSFET 100V 160mOhm SOT223 GREEN EMC | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | Si | N-Channel | 100 V | 5.6 A | 156 mOhms | 2.8 V | 3.8 nC | PowerTrench | |||||||
|
5,000
In-stock
|
Texas instruments | MOSFET 100V 7.8mOhm N-CH Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 8.7 mOhms | 2.8 V | 27 nC | Enhancement | NexFET |