- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
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- Number of Channels :
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16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Package | Factory Pack Quantity | RoHS | |
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45,200
In-stock
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Infineon Technologies | MOSFET MOSFET_(20V 40V) | - 20 V, + 20 V | Tape & Reel (TR) | 1 Channel | 167 W | N-Channel | 40 V | 200 A | 900 uOhms | 2.8 V | 99 nC | HSOF-5 | 2000 | Green available | ||||||||||
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26,850
In-stock
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Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 16 A | 51 mOhms | 2.8 V | 6.1 nC | PowerTrench | ||||||||
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770
In-stock
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Fairchild Semiconductor | MOSFET N-Ch Power Trench MOSFET 150V 169A | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 169 A | 5 mOhms | 2.8 V | 70 nC | PowerTrench | ||||||||
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2,479
In-stock
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Fairchild Semiconductor | MOSFET PT5 100V LL ZENER 150MOHM GRN COMPOUND | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 6.8 A | 175 mOhms | 2.8 V | 3.61 nC | PowerTrench | |||||||||
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17,914
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 1 A | 190 mOhms | 2.8 V | 2 nC | Enhancement | ||||||||
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8,730
In-stock
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Texas instruments | MOSFET 100V, 49mOhm SON2x2 NexFET Power MOSFET 6-WSON ... | 20 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 58 mOhms | 2.8 V | 5.6 nC | Enhancement | NexFET | |||||||
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2,470
In-stock
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Wolfspeed / Cree | MOSFET SIC MOSFET 1200V RDS ON 280 mOhm | - 10 V to + 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1200 V | 10 A | 280 mOhms | 2.8 V | 5.6 nC | Enhancement | Z-FET | |||||||
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5,600
In-stock
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Wolfspeed / Cree | MOSFET SiC Power MOSFET 1200V, 60A | - 10 V, + 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1200 V | 60 A | 40 mOhms | 2.8 V | 283 nC | Enhancement | ||||||||
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1,680
In-stock
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Texas instruments | MOSFET 60V NCh NexFET Power MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.5 mOhms | 2.8 V | 49 nC | NexFET | ||||||||
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GET PRICE |
14,850
In-stock
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Texas instruments | MOSFET 100V, NCh NexFET | 2.8 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 14.1 mOhms | 2.8 V | 17 nC | Enhancement | |||||||
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215
In-stock
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Texas instruments | MOSFET 100V 8.7mOhm N-CH Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 10.5 mOhms | 2.8 V | 27 nC | Enhancement | NexFET | |||||||
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190
In-stock
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Texas instruments | MOSFET 80V 7.6mOhm N-CH Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 80 V | 100 A | 8.8 mOhms | 2.8 V | 28 nC | Enhancement | NexFET | |||||||
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4,000
In-stock
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IR / Infineon | MOSFET 40V N-Ch 270A 1.0 mOhm 220nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 270 A | 700 uOhms | 2.8 V | 220 nC | Directfet | ||||||||
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7,000
In-stock
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Fairchild Semiconductor | MOSFET 100V 160mOhm SOT223 GREEN EMC | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | Si | N-Channel | 100 V | 5.6 A | 156 mOhms | 2.8 V | 3.8 nC | PowerTrench | ||||||||||
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5,000
In-stock
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Texas instruments | MOSFET 100V 7.8mOhm N-CH Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 8.7 mOhms | 2.8 V | 27 nC | Enhancement | NexFET | |||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 80V 45A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 45 A | 13.6 mOhms | 2.8 V | 19 nC | Enhancement | OptiMOS |
