- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,479
In-stock
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Fairchild Semiconductor | MOSFET PT5 100V LL ZENER 150MOHM GRN COMPOUND | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 6.8 A | 175 mOhms | 2.8 V | 3.61 nC | PowerTrench | |||||
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8,730
In-stock
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Texas instruments | MOSFET 100V, 49mOhm SON2x2 NexFET Power MOSFET 6-WSON ... | 20 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 58 mOhms | 2.8 V | 5.6 nC | Enhancement | NexFET | |||
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GET PRICE |
14,850
In-stock
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Texas instruments | MOSFET 100V, NCh NexFET | 2.8 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 14.1 mOhms | 2.8 V | 17 nC | Enhancement | |||
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215
In-stock
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Texas instruments | MOSFET 100V 8.7mOhm N-CH Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 10.5 mOhms | 2.8 V | 27 nC | Enhancement | NexFET | |||
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7,000
In-stock
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Fairchild Semiconductor | MOSFET 100V 160mOhm SOT223 GREEN EMC | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | Si | N-Channel | 100 V | 5.6 A | 156 mOhms | 2.8 V | 3.8 nC | PowerTrench | ||||||
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5,000
In-stock
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Texas instruments | MOSFET 100V 7.8mOhm N-CH Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 8.7 mOhms | 2.8 V | 27 nC | Enhancement | NexFET |
