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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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19,100
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 140A 7mOhm 150nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 140 A | 7 mOhms | 150 nC | |||||||
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149
In-stock
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IR / Infineon | MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 140 A | 7 mOhms | 150 nC | |||||||
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768
In-stock
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IR / Infineon | MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 106 A | 7 mOhms | 150 nC | |||||||
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800
In-stock
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Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 7mOhms 150nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 106 A | 7 mOhms | 4 V | 150 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 106 A | 7 mOhms | 150 nC | |||||||
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275
In-stock
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IR / Infineon | MOSFET 75V 1 N-CH HEXFET 7mOhms 150nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 105 A | 7 mOhms | 2 V to 4 V | 150 nC | Enhancement | |||
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VIEW | IR / Infineon | MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 106 A | 7 mOhms | 150 nC |
