- Vgs - Gate-Source Voltage :
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- Rds On - Drain-Source Resistance :
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- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
75 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Qualification | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,997
In-stock
|
Vishay Semiconductors | MOSFET -12V Vds -60A Id AEC-Q101 Qualified | +/- 8 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 60 A | 4.8 mOhms | - 1.5 V | 150 nC | Enhancement | |||||
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GET PRICE |
6,078
In-stock
|
Vishay Semiconductors | MOSFET 60V 50A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 50 A | 0.0135 Ohms | - 2.5 V | 150 nC | Enhancement | TrenchFET | |||
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GET PRICE |
9,230
In-stock
|
IR / Infineon | MOSFET MOSFT 100V 180A 4.5mOhm 150nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 3.7 mOhms | 150 nC | ||||||||
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4,507
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.3 mOhms | 1.2 V | 150 nC | Enhancement | OptiMOS | ||||
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1,147
In-stock
|
IR / Infineon | MOSFET Automotive MOSFET P 38A 150nC D2Pak | SMD/SMT | TO-252-3 | Reel | Si | P-Channel | - 100 V | - 38 A | 60 mOhms | 150 nC | |||||||||||
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300
In-stock
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IXYS | MOSFET 64.0 Amps 500 V 0.09 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 64 A | 85 mOhms | 5.5 V | 150 nC | Enhancement | PolarHV, HiPerFET | ||||
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2,926
In-stock
|
IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 2.7 mOhms | 2 V | 150 nC | Enhancement | |||||
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756
In-stock
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Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 75 A | 17 mOhms | 3 V | 150 nC | Enhancement | |||||
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3,468
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.5 mOhms | 1.2 V | 150 nC | Enhancement | OptiMOS | ||||
|
|
1,064
In-stock
|
Infineon Technologies | MOSFET 40V SGL N-CH HEXFET 1.3mOhms | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 240 A | 1.3 mOhms | 2.2 V to 3.9 V | 150 nC | Enhancement | CoolIRFet | ||||
|
|
5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.3 mOhms | 1.2 V | 150 nC | Enhancement | OptiMOS | ||||
|
|
1,992
In-stock
|
IR / Infineon | MOSFET Auto 40V N-Ch FET 1.4mOhm 195A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.8 mOhms | 2 V to 4 V | 150 nC | Enhancement | CoolIRFet | ||||
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1,989
In-stock
|
Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-8x8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 135 A | 2.8 mOhms | 1.5 V | 150 nC | Enhancement | |||||
|
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1,216
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 135A 4.7mOhm 150nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 135 A | 4.7 mOhms | 4 V | 150 nC | ||||||
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|
GET PRICE |
53,100
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 168A 4.6mOhm 152nC Qg | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 3.7 mOhms | 150 nC | ||||||||
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549
In-stock
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Fairchild Semiconductor | MOSFET 80V 2.7mohm TO220 3L NON JEDEC GREEN EMC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 242 A | 1.96 mOhms | 3.8 V | 150 nC | Enhancement | |||||
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|
GET PRICE |
15,260
In-stock
|
STMicroelectronics | MOSFET N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Powe... | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 80 V | 110 A | 5.6 mOhms | 2.5 V | 150 nC | Enhancement | |||||
|
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679
In-stock
|
IXYS | MOSFET Trench T2 HiperFET Power MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 110 A | 11 mOhms | 4.5 V | 150 nC | Enhancement | HiPerFET | ||||
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973
In-stock
|
IR / Infineon | MOSFET PLANAR_MOSFETS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 103 A | 9.3 mOhms | 2 V | 150 nC | Enhancement | |||||
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304
In-stock
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IXYS | MOSFET POLAR HT MOSFET 150V 120A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 120 A | 16 mOhms | 5 V | 150 nC | Enhancement | PolarHT | ||||
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535
In-stock
|
IR / Infineon | MOSFET 100V 190A 4 mOhm Automotive MOSFET | SMD/SMT | TO-263-7 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 A | 3.3 mOhms | 150 nC | |||||||||
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GET PRICE |
19,630
In-stock
|
STMicroelectronics | MOSFET N-channel 80 V, 0.0058 Ohm typ., 110 A, STripFET F6 Powe... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 80 A | 6.5 mOhms | 2.5 V to 4.5 V | 150 nC | Enhancement | ||||
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40
In-stock
|
IXYS | MOSFET 47 Amps 600V 0.045 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 40 mOhms | 3 V | 150 nC | Enhancement | CoolMOS | ||||
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641
In-stock
|
IR / Infineon | MOSFET 40V SGL N-CH HEXFET 1.3mOhms | SMD/SMT | TO-263-7 | Reel | 1 Channel | Si | N-Channel | 40 V | 240 A | 1 MOhms | 150 nC | ||||||||||
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3,000
In-stock
|
Siliconix / Vishay | MOSFET P Ch -80Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 80 V | - 32 A | 27.5 mOhms | - 2.5 V | 150 nC | Enhancement | |||||
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|
539
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 175A 4.7mOhm 150nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 175 A | 4.7 mOhms | 4 V | 150 nC | ||||||
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19,100
In-stock
|
Infineon Technologies | MOSFET MOSFT 75V 140A 7mOhm 150nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 140 A | 7 mOhms | 150 nC | |||||||||
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86
In-stock
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IXYS | MOSFET -24 Amps -200V 0.15 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 24 A | 150 mOhms | - 5 V | 150 nC | Enhancement | |||||
|
|
308
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 4.7mOhms 150nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 135 A | 4.7 mOhms | 2 V to 4 V | 150 nC | Enhancement | |||||
|
|
59
In-stock
|
IXYS | MOSFET 130Amps 200V | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 130 A | 16 mOhms | 5 V | 150 nC | Enhancement |
