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31 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
9,230
In-stock
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IR / Infineon | MOSFET MOSFT 100V 180A 4.5mOhm 150nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 3.7 mOhms | 150 nC | ||||||||
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300
In-stock
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IXYS | MOSFET 64.0 Amps 500 V 0.09 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 64 A | 85 mOhms | 5.5 V | 150 nC | Enhancement | PolarHV, HiPerFET | ||||
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756
In-stock
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Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 75 A | 17 mOhms | 3 V | 150 nC | Enhancement | |||||
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GET PRICE |
53,100
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 168A 4.6mOhm 152nC Qg | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 3.7 mOhms | 150 nC | ||||||||
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549
In-stock
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Fairchild Semiconductor | MOSFET 80V 2.7mohm TO220 3L NON JEDEC GREEN EMC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 242 A | 1.96 mOhms | 3.8 V | 150 nC | Enhancement | |||||
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GET PRICE |
15,260
In-stock
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STMicroelectronics | MOSFET N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Powe... | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 80 V | 110 A | 5.6 mOhms | 2.5 V | 150 nC | Enhancement | |||||
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679
In-stock
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IXYS | MOSFET Trench T2 HiperFET Power MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 110 A | 11 mOhms | 4.5 V | 150 nC | Enhancement | HiPerFET | ||||
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40
In-stock
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IXYS | MOSFET 47 Amps 600V 0.045 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 40 mOhms | 3 V | 150 nC | Enhancement | CoolMOS | ||||
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539
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 175A 4.7mOhm 150nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 175 A | 4.7 mOhms | 4 V | 150 nC | ||||||
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19,100
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 140A 7mOhm 150nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 140 A | 7 mOhms | 150 nC | |||||||||
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86
In-stock
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IXYS | MOSFET -24 Amps -200V 0.15 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 24 A | 150 mOhms | - 5 V | 150 nC | Enhancement | |||||
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59
In-stock
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IXYS | MOSFET 130Amps 200V | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 130 A | 16 mOhms | 5 V | 150 nC | Enhancement | |||||
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52
In-stock
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IXYS | MOSFET 110 Amps 150V | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 13 mOhms | 4.5 V | 150 nC | Enhancement | |||||
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172
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 175 A | 4.7 mOhms | 150 nC | Enhancement | |||||||
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25
In-stock
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IXYS | MOSFET N-Channel Super Coolmos Power MOSFET | 20 V | Through Hole | ISOPLUS-i4-PAK-5 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 45 mOhms | 3 V | 150 nC | Enhancement | CoolMOS, HiPerDyn | ||||
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116
In-stock
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IR / Infineon | MOSFET Auto 40V N-Ch FET 1.4mOhm 195A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.8 mOhms | 2 V to 4 V | 150 nC | Enhancement | CoolIRFet | ||||
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280
In-stock
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IR / Infineon | MOSFET Auto 40V N-Ch FET 1.4mOhm 195A | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.8 mOhms | 2 V to 4 V | 150 nC | Enhancement | CoolIRFet | ||||
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24
In-stock
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IXYS | MOSFET 20 Amps 800V 0.29 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 20 A | 290 mOhms | 5 V | 150 nC | Enhancement | PolarHV, ISOPLUS247, HiPerFET | ||||
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149
In-stock
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IR / Infineon | MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 140 A | 7 mOhms | 150 nC | |||||||||
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24
In-stock
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IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 120 A | 27 mOhms | 3 V | 150 nC | Enhancement | HyperFET | ||||
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16
In-stock
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IXYS | MOSFET DUAL PHASE LEGCONFIG 150V 53A MOSFET | 30 V | Through Hole | ISOPLUS-i4-PAK-5 | - 55 C | + 175 C | Tube | 2 Channel | Si | N-Channel | 150 V | 53 A | 20 mOhms | 4.5 V | 150 nC | TrenchT2 | |||||
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275
In-stock
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IR / Infineon | MOSFET 40V 295A 1.8mOhm Automotive MOSFET | Through Hole | TO-262-3 | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 295 A | 1.8 mOhms | 150 nC | |||||||||
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58
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 180A 4.5mOhm 150nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 3.7 mOhms | 150 nC | |||||||||
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2
In-stock
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IXYS | MOSFET 32 Amps 800V 0.27 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 32 A | 270 mOhms | 5 V | 150 nC | Enhancement | PolarHV, HiPerFET | ||||
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58
In-stock
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Microsemi | MOSFET Power MOSFET - CoolMOS | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 600 V | 60 A | 45 mOhms | 3 V | 150 nC | Enhancement | |||||||
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57
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 1000 V | 18 A | 600 mOhms | 4 V | 150 nC | Enhancement | POWER MOS 8 | ||||||
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47
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 25 A | 310 mOhms | 3 V | 150 nC | Enhancement | ||||||
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13
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 1000 V | 17 A | 670 mOhms | 4 V | 150 nC | Enhancement | POWER MOS 8 | |||||
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47
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 800 V | 23 A | 400 mOhms | 4 V | 150 nC | Enhancement | POWER MOS 8 | ||||||
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VIEW | IXYS | MOSFET 120 Amps 150V 0.016 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 120 A | 16 mOhms | 5 V | 150 nC | Enhancement | PolarHT |