- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
32 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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314
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 7 A | 1.9 Ohms | 3 V to 5 V | 47 nC | Enhancement | |||||
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988
In-stock
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Fairchild Semiconductor | MOSFET 500V N-CHANNEL | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 7 A | 760 mOhms | Enhancement | UniFET | ||||||
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1,258
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel SuperFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 530 mOhms | Enhancement | SuperFET | ||||||
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887
In-stock
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Fairchild Semiconductor | MOSFET HIGH POWER | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 600 mOhms | Enhancement | SuperFET | ||||||
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676
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel SuperFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 530 mOhms | Enhancement | SuperFET | ||||||
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934
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel UniFET-II | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 7 A | 850 mOhms | 3 V to 5 V | 14 nC | UniFET | |||||
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830
In-stock
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STMicroelectronics | MOSFET N-Ch, 600V-0.85ohms 7A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 950 mOhms | 3.75 V | 38 nC | Enhancement | |||||
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696
In-stock
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STMicroelectronics | MOSFET N-Ch 650 Volt 6.4Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 1.2 Ohms | 41 nC | Enhancement | ||||||
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1,000
In-stock
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STMicroelectronics | MOSFET NCH 6V 7A FDMESH FDMesh | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 700 mOhms | Enhancement | |||||||
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1,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 670 mOhms | 3 V | 12.5 nC | MDmesh II Plus | |||||
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476
In-stock
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IXYS | MOSFET 7 Amps 1000V | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 7 A | 1.9 Ohms | HyperFET | |||||||
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1,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 670 mOhms | 3 V | 12.5 nC | MDmesh II Plus | |||||
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793
In-stock
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Fairchild Semiconductor | MOSFET 650V N-Channel Adv Q-FET C-Series | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 1.4 Ohms | Enhancement | QFET | ||||||
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203
In-stock
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Fairchild Semiconductor | MOSFET 800V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 7 A | 1.9 Ohms | Enhancement | QFET | ||||||
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38,800
In-stock
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Fairchild Semiconductor | MOSFET 650V 15A 0.44OHMS NCH POWER TRENCH | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 440 mOhms | Enhancement | |||||||
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2,362
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 30mOhms 19nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 7 A | 50 mOhms | 19 nC | Enhancement | ||||||
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778
In-stock
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Fairchild Semiconductor | MOSFET 650V N-Ch Advance Q-FET C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 1.4 Ohms | Enhancement | |||||||
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112
In-stock
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IXYS | MOSFET 7 Amps 800V 1.44 Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 7 A | 1.4 Ohms | Enhancement | HyperFET | ||||||
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439
In-stock
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STMicroelectronics | MOSFET N-Ch 600 Volt 7 Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 950 mOhms | 38 nC | Enhancement | ||||||
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GET PRICE |
8,750
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 7A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 650 mOhms | 2.5 V | 20.5 nC | Enhancement | CoolMOS | |||
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272
In-stock
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Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 199 mOhms | 3 V | 20 nC | Enhancement | CoolMOS | ||||
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726
In-stock
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IR / Infineon | MOSFET Automotive MOSFET 7 mOhm, 56 nC Qg, IPAK | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 56 V | 7 A | 7 mOhms | 56 nC | Enhancement | ||||||
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118
In-stock
|
IXYS | MOSFET 7 Amps 800V 1.44 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 7 A | 1.44 Ohms | 5 V | 32 nC | Enhancement | Polar, HiPerFET | ||||
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169
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel SuperFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 600 mOhms | 5 V | 30 nC | Enhancement | |||||
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200
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 540 mOhms | 3 V | 16 nC | Enhancement | |||||
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1,500
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 670 mOhms | 3 V | 12.5 nC | MDmesh II Plus | |||||
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VIEW | Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 199 mOhms | 3 V | 20 nC | Enhancement | CoolMOS | ||||
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900
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 80 V | 7 A | 730 mOhms | 3 V | 12 nC | Enhancement | |||||
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46
In-stock
|
IXYS | MOSFET 1.1 Ohms Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 1.1 Ohms | 5.5 V | 20 nC | Enhancement | PolarHV | ||||
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VIEW | IXYS | MOSFET 7 Amps 800V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 7 A | 1.4 Ohms | Enhancement | HyperFET |