- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 670 mOhms | 3 V | 12.5 nC | MDmesh II Plus | ||||
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1,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 670 mOhms | 3 V | 12.5 nC | MDmesh II Plus | ||||
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272
In-stock
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Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 199 mOhms | 3 V | 20 nC | Enhancement | CoolMOS | |||
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200
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 540 mOhms | 3 V | 16 nC | Enhancement | ||||
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1,500
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 670 mOhms | 3 V | 12.5 nC | MDmesh II Plus | ||||
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VIEW | Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 199 mOhms | 3 V | 20 nC | Enhancement | CoolMOS | |||
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900
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 80 V | 7 A | 730 mOhms | 3 V | 12 nC | Enhancement |
