- Manufacture :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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11,665
In-stock
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Infineon Technologies | MOSFET P-Ch DPAK-2 | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 390 mA, - 390 mA | 700 mOhms, 700 mOhms | - 1.2 V, - 1.2 V | - 620 pC, - 620 pC | Enhancement | ||||
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4,915
In-stock
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Infineon Technologies | MOSFET P-Ch | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 390 mA, - 390 mA | 700 mOhms, 700 mOhms | - 1.2 V, - 1.2 V | - 620 pC, - 620 pC | Enhancement | ||||
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5,475
In-stock
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onsemi | MOSFET PFET SC88 20V 88MA 2 | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 1 A, - 1 A | 215 mOhms, 215 mOhms | - 1.2 V, - 1.2 V | 2.2 nC, 2.2 nC | Enhancement | ||||
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2,480
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL N-CH | +/- 12 V, +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 4.6 A, - 4.6 A | 54 mOhms, 54 mOhms | - 1.2 V, - 1.2 V | - 10 nC, - 10 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET P-Ch -20V -5.7A DSO-8 OptiMOS P | +/- 12 V, +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 5.7 A, - 5.7 A | 32 mOhms, 32 mOhms | - 1.2 V, - 1.2 V | - 16 nC, - 16 nC | Enhancement | OptiMOS | |||
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VIEW | Infineon Technologies | MOSFET SMALL SIGNAL N-CH | +/- 12 V, +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 4.6 A, - 4.6 A | 54 mOhms, 54 mOhms | - 1.2 V, - 1.2 V | - 10 nC, - 10 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET P-Ch -20V -5.7A DSO-8 OptiMOS P | +/- 12 V, +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 5.7 A, - 5.7 A | 32 mOhms, 32 mOhms | - 1.2 V, - 1.2 V | - 16 nC, - 16 nC | Enhancement |
