3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
11,066
In-stock
|
Infineon Technologies | MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6 | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 950 mA, 530 mA | 266 mOhms, 745 mOhms | 700 mV, - 1.2 V | 340 pC, - 400 pC | Enhancement | |||
|
|
7,424
In-stock
|
Infineon Technologies | MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6 | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 950 mA, 530 mA | 266 mOhms, 745 mOhms | 700 mV, - 1.2 V | 340 pC, - 400 pC | Enhancement | |||
|
|
3,415
In-stock
|
Infineon Technologies | MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6 | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 950 mA, 530 mA | 266 mOhms, 745 mOhms | 700 mV, - 1.2 V | 340 pC, - 400 pC | Enhancement |
