- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,000
In-stock
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Vishay Semiconductors | MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 0.8 A, 0.8 A | 0.2 Ohms, 0.2 Ohms | 0.45 V, 0.45 V | 1.25 nC, 1.25 nC | Enhancement | |||
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11,066
In-stock
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Infineon Technologies | MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6 | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 950 mA, 530 mA | 266 mOhms, 745 mOhms | 700 mV, - 1.2 V | 340 pC, - 400 pC | Enhancement | |||
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11,665
In-stock
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Infineon Technologies | MOSFET P-Ch DPAK-2 | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 390 mA, - 390 mA | 700 mOhms, 700 mOhms | - 1.2 V, - 1.2 V | - 620 pC, - 620 pC | Enhancement | |||
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7,424
In-stock
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Infineon Technologies | MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6 | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 950 mA, 530 mA | 266 mOhms, 745 mOhms | 700 mV, - 1.2 V | 340 pC, - 400 pC | Enhancement | |||
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3,415
In-stock
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Infineon Technologies | MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6 | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 950 mA, 530 mA | 266 mOhms, 745 mOhms | 700 mV, - 1.2 V | 340 pC, - 400 pC | Enhancement | |||
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4,915
In-stock
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Infineon Technologies | MOSFET P-Ch | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 390 mA, - 390 mA | 700 mOhms, 700 mOhms | - 1.2 V, - 1.2 V | - 620 pC, - 620 pC | Enhancement | |||
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5,475
In-stock
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onsemi | MOSFET PFET SC88 20V 88MA 2 | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 1 A, - 1 A | 215 mOhms, 215 mOhms | - 1.2 V, - 1.2 V | 2.2 nC, 2.2 nC | Enhancement | |||
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3,000
In-stock
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Siliconix / Vishay | MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 0.78 A, 0.78 A | 0.2 Ohms, 0.2 Ohms | 0.6 V, 0.6 V | 1.2 nC, 1.2 nC | Enhancement |
