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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
FQA10N80C_F109
1+
$2.850
10+
$2.420
100+
$2.100
250+
$1.990
RFQ
278
In-stock
Fairchild Semiconductor MOSFET 800V N-Ch QFET Advance 30 V Through Hole TO-3PN-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 10 A 1.1 Ohms     Enhancement QFET
IXFA10N80P
1+
$3.000
10+
$2.550
100+
$2.210
250+
$2.100
RFQ
105
In-stock
IXYS MOSFET 10 Amps 800V 1.1 Rds 30 V SMD/SMT TO-263-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 10 A 1.1 Ohms     Enhancement HyperFET, PolarHV
IXFH10N80P
1+
$3.840
10+
$3.270
100+
$2.830
250+
$2.690
RFQ
62
In-stock
IXYS MOSFET 10 Amps 800V 1.1 Rds 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 10 A 1.1 Ohms 5.5 V 40 nC Enhancement PolarHV, HiPerFET
IXFP10N80P
1+
$4.080
10+
$3.470
100+
$3.010
250+
$2.850
RFQ
59
In-stock
IXYS MOSFET 10 Amps 800V 1.1 Rds 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 10 A 1.1 Ohms 5.5 V 40 nC Enhancement PolarHV, HiPerFET
TK10A80E,S4X
1+
$2.410
10+
$1.950
100+
$1.560
500+
$1.360
RFQ
14,200
In-stock
Toshiba MOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS 30 V Through Hole TO-220FP-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 800 V 10 A 700 mOhms 4 V 46 nC Enhancement  
IXFR20N80P
1+
$8.260
10+
$7.470
25+
$7.120
100+
$6.180
VIEW
RFQ
IXYS MOSFET 10 Amps 800V 0.5 Rds 30 V SMD/SMT TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 10 A 570 mOhms     Enhancement HyperFET
TK10J80E,S1E
1+
$3.090
10+
$2.480
100+
$2.260
250+
$2.040
VIEW
RFQ
Toshiba MOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN 30 V Through Hole TO-3PN-3 - 55 C + 150 C   1 Channel Si N-Channel 800 V 10 A 700 mOhms 4 V 46 nC Enhancement  
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