- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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278
In-stock
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Fairchild Semiconductor | MOSFET 800V N-Ch QFET Advance | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 10 A | 1.1 Ohms | Enhancement | QFET | ||||||
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105
In-stock
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IXYS | MOSFET 10 Amps 800V 1.1 Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 10 A | 1.1 Ohms | Enhancement | HyperFET, PolarHV | ||||||
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62
In-stock
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IXYS | MOSFET 10 Amps 800V 1.1 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 10 A | 1.1 Ohms | 5.5 V | 40 nC | Enhancement | PolarHV, HiPerFET | ||||
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59
In-stock
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IXYS | MOSFET 10 Amps 800V 1.1 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 10 A | 1.1 Ohms | 5.5 V | 40 nC | Enhancement | PolarHV, HiPerFET | ||||
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14,200
In-stock
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Toshiba | MOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 10 A | 700 mOhms | 4 V | 46 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET 10 Amps 800V 0.5 Rds | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 10 A | 570 mOhms | Enhancement | HyperFET | ||||||
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VIEW | Toshiba | MOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 10 A | 700 mOhms | 4 V | 46 nC | Enhancement |