- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
278
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Ch QFET Advance | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 10 A | 1.1 Ohms | Enhancement | QFET | ||||||
|
105
In-stock
|
IXYS | MOSFET 10 Amps 800V 1.1 Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 10 A | 1.1 Ohms | Enhancement | HyperFET, PolarHV | ||||||
|
62
In-stock
|
IXYS | MOSFET 10 Amps 800V 1.1 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 10 A | 1.1 Ohms | 5.5 V | 40 nC | Enhancement | PolarHV, HiPerFET | ||||
|
59
In-stock
|
IXYS | MOSFET 10 Amps 800V 1.1 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 10 A | 1.1 Ohms | 5.5 V | 40 nC | Enhancement | PolarHV, HiPerFET | ||||
|
VIEW | IXYS | MOSFET 10 Amps 800V 0.5 Rds | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 10 A | 570 mOhms | Enhancement | HyperFET |