MOSFET - Kaimeite

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4 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	IXFH14N80P	1+ $5.700 10+ $4.840 100+ $4.200 250+ $3.980		PDF RFQ	55 In-stock	IXYS	MOSFET DIODE Id14 BVdass800	30 V	Through Hole	TO-247-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	800 V	14 A	720 mOhms	5.5 V	61 nC	Enhancement	PolarHV, HiPerFET
	IXFH10N80P	1+ $3.840 10+ $3.270 100+ $2.830 250+ $2.690		PDF RFQ	62 In-stock	IXYS	MOSFET 10 Amps 800V 1.1 Rds	30 V	Through Hole	TO-247-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	800 V	10 A	1.1 Ohms	5.5 V	40 nC	Enhancement	PolarHV, HiPerFET
	IXFP10N80P	1+ $4.080 10+ $3.470 100+ $3.010 250+ $2.850		PDF RFQ	59 In-stock	IXYS	MOSFET 10 Amps 800V 1.1 Rds	30 V	Through Hole	TO-220-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	800 V	10 A	1.1 Ohms	5.5 V	40 nC	Enhancement	PolarHV, HiPerFET
	IXTA2N80P	1+ $1.280 10+ $1.100 100+ $0.839 500+ $0.742		PDF RFQ	20 In-stock	IXYS	MOSFET 2 Amps 800V 6 Rds	30 V	SMD/SMT	TO-263-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	800 V	2 A	5 Ohms	5.5 V	10.6 nC	Enhancement	PolarHV

IXFH14N80P

IXFH14N80P

IXYS

MOSFET DIODE Id14 BVdass800

Stock : 55

1+: $5.700

10+: $4.840

100+: $4.200

250+: $3.980

IXFH10N80P

IXFH10N80P

IXYS

MOSFET 10 Amps 800V 1.1 Rds

Stock : 62

1+: $3.840

10+: $3.270

100+: $2.830

250+: $2.690

IXFP10N80P

IXFP10N80P

IXYS

MOSFET 10 Amps 800V 1.1 Rds

Stock : 59

1+: $4.080

10+: $3.470

100+: $3.010

250+: $2.850

IXTA2N80P

IXTA2N80P

IXYS

MOSFET 2 Amps 800V 6 Rds

Stock : 20

1+: $1.280

10+: $1.100

100+: $0.839

500+: $0.742

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