- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
-
- 1.05 Ohms (2)
- 1.1 Ohms (1)
- 1.15 Ohms (1)
- 1.2 Ohms (2)
- 1.4 Ohms (1)
- 1.44 Ohms (1)
- 1.5 Ohms (2)
- 1.55 Ohms (2)
- 1.6 Ohms (2)
- 1.8 Ohms (1)
- 1.9 Ohms (1)
- 2.1 Ohms (2)
- 2.4 Ohms (1)
- 2.5 Ohms (2)
- 2.8 Ohms (2)
- 220 mOhms (1)
- 250 mOhms (1)
- 260 mOhms (2)
- 280 mOhms (3)
- 295 mOhms (1)
- 3 Ohms (1)
- 3.5 Ohms (3)
- 3.6 Ohms (1)
- 300 mOhms (2)
- 370 mOhms (2)
- 4.5 Ohms (2)
- 4.8 Ohms (1)
- 450 mOhms (1)
- 470 mOhms (1)
- 6 Ohms (1)
- 6.3 Ohms (1)
- 630 mOhms (1)
- 750 mOhms (1)
- 900 mOhms (1)
- 950 mOhms (2)
52 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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868
In-stock
|
Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS | |||||
|
488
In-stock
|
Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.4 Ohms | 3 V | 10 nC | Enhancement | CoolMOS | |||||
|
387
In-stock
|
Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 11 A | 450 mOhms | 3 V | 24 nC | Enhancement | CoolMOS | |||||
|
964
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.5 Ohms | 3 V | 5 nC | Enhancement | |||||
|
2,841
In-stock
|
STMicroelectronics | MOSFET N-Ch 800V 0.19 Ohm 19.5A MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 19.5 A | 260 mOhms | 4 V | 40 nC | Enhancement | |||||
|
702
In-stock
|
Fairchild Semiconductor | MOSFET 800V 23A N-Channel SuperFET II MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 23 A | 220 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET II | ||||
|
2,316
In-stock
|
STMicroelectronics | MOSFET N-Ch 800 Volt 4.3 A Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4.3 A | 2.4 Ohms | 32.4 nC | Enhancement | ||||||
|
25,820
In-stock
|
STMicroelectronics | MOSFET N-Ch 800 V 0.37 Ohm 12 A Zener-protect | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 12 A | 370 mOhms | 4 V | 29 nC | Enhancement | |||||
|
751
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 9 A | 470 mOhms | 3 V | 22 nC | Enhancement | |||||
|
1,200
In-stock
|
STMicroelectronics | MOSFET N-Ch 800 V 0.37 Ohm 12 A Zener-protect | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 12 A | 370 mOhms | 4 V | 29 nC | Enhancement | |||||
|
1,569
In-stock
|
STMicroelectronics | MOSFET N-Ch 800V 0.76 Ohm 6AMDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 950 mOhms | 4 V | 16.5 nC | Enhancement | |||||
|
2,743
In-stock
|
STMicroelectronics | MOSFET N-CH 800V 3.5Ohm typ 2A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 3.5 Ohms | 4 V | 3 nC | ||||||
|
773
In-stock
|
STMicroelectronics | MOSFET N-Ch 800 Volt 10.5A Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 10.5 A | 750 mOhms | Enhancement | |||||||
|
721
In-stock
|
STMicroelectronics | MOSFET N-Ch 800V 0.3Ohm 14A pwr MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 14 A | 300 mOhms | 4 V | 32 nC | ||||||
|
106,800
In-stock
|
STMicroelectronics | MOSFET N-Ch 800V 0.95Ohm 6A MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 1.2 Ohms | 4 V | 13.4 nC | ||||||
|
994
In-stock
|
STMicroelectronics | MOSFET N-channel 800 V, 0.23 O typ., 16 A MDmesh K5 Power MOSF... | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 16 A | 280 mOhms | 4 V | 33 nC | Enhancement | ||||||
|
1,728
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3.9 A | 3.6 Ohms | Enhancement | QFET | ||||||
|
874
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 1.55 Ohms | Enhancement | QFET | ||||||
|
2,472
In-stock
|
STMicroelectronics | MOSFET N-Ch 800 Volt 2.5Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2.5 A | 4.5 Ohms | 19 nC | Enhancement | ||||||
|
47,200
In-stock
|
STMicroelectronics | MOSFET N-Ch 800 Volt 9 Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 9 A | 900 mOhms | 72 nC | Enhancement | ||||||
|
1,000
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Ch Adv Q-FET C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 5.5 A | 2.5 Ohms | Enhancement | |||||||
|
2,200
In-stock
|
STMicroelectronics | MOSFET N-channel 800 V 0.25 17A Mdmesh | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 250 mOhms | 70 nC | |||||||
|
813
In-stock
|
STMicroelectronics | MOSFET N-Ch 800V .95Ohm 6A MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 800 V | 6 A | 1.2 Ohms | 4 V | 13.4 nC | |||||||
|
440
In-stock
|
STMicroelectronics | MOSFET N-channel 800 V, 0.23 O typ., 16 A MDmesh K5 Power MOSF... | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 16 A | 280 mOhms | 4 V | 33 nC | Enhancement | ||||||
|
351
In-stock
|
STMicroelectronics | MOSFET N-channel 800 V MDMesh | 30 V | Through Hole | TO-220-3 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 295 mOhms | 70 nC | |||||||
|
801
In-stock
|
STMicroelectronics | MOSFET N-Ch 800 Volt 6.2Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6.2 A | 1.5 Ohms | 46 nC | Enhancement | ||||||
|
1,051
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4.5 A | 1.6 Ohms | 4 V | 13 nC | Enhancement | |||||
|
1,391
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4.5 A | 1.6 Ohms | 4 V | 13 nC | Enhancement | |||||
|
736
In-stock
|
STMicroelectronics | MOSFET N-channel 800 V, 0.55 Ohm typ., 8 A MDmesh K5 Power MOSF... | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 8 A | 630 mOhms | 3 V | 15 nC | Enhancement | ||||||
|
818
In-stock
|
STMicroelectronics | MOSFET N-CH 800V 2.1Ohm 3A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3 A | 2.1 Ohms | 4 V | 10.5 nC | Enhancement |