- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Packaging :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
-
- - 100 V (3)
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- Id - Continuous Drain Current :
-
- - 11.5 A (2)
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- Rds On - Drain-Source Resistance :
-
- 1 Ohms (3)
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- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- - 10 nC (1)
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- Applied Filters :
336 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
868
In-stock
|
Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS | ||||
|
|
488
In-stock
|
Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.4 Ohms | 3 V | 10 nC | Enhancement | CoolMOS | ||||
|
|
387
In-stock
|
Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 11 A | 450 mOhms | 3 V | 24 nC | Enhancement | CoolMOS | ||||
|
|
964
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.5 Ohms | 3 V | 5 nC | Enhancement | ||||
|
|
182
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 0.24 Ohm typ., 20 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 20 A | 210 mOhms | 3 V | 40 nC | Enhancement | |||||
|
|
2,841
In-stock
|
STMicroelectronics | MOSFET N-Ch 800V 0.19 Ohm 19.5A MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 19.5 A | 260 mOhms | 4 V | 40 nC | Enhancement | ||||
|
|
1,934
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1.2 kV | 12 A | 620 mOhms | 3 V | 44.2 nC | Enhancement | |||||
|
|
5,574
In-stock
|
Fairchild Semiconductor | MOSFET 300V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 3.2 A | 2.2 Ohms | Enhancement | QFET | |||||
|
|
4,022
In-stock
|
Fairchild Semiconductor | MOSFET 500V N-Channel MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 6 A | 900 mOhms | Enhancement | ||||||
|
|
4,814
In-stock
|
Fairchild Semiconductor | MOSFET 500V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 5 A | 1.4 Ohms | Enhancement | ||||||
|
|
3,478
In-stock
|
Fairchild Semiconductor | MOSFET 250V P-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 250 V | - 9.4 A | 620 mOhms | Enhancement | QFET | |||||
|
|
2,429
In-stock
|
Fairchild Semiconductor | MOSFET SINGLE N-CH 200V ULTRAFET TRENCH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 39 A | 66 mOhms | Enhancement | ||||||
|
|
154,200
In-stock
|
Fairchild Semiconductor | MOSFET 200V N-CHANNEL MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 52 A | 49 mOhms | Enhancement | ||||||
|
|
1,321
In-stock
|
Fairchild Semiconductor | MOSFET 400V N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 24 A | 175 mOhms | Enhancement | UniFET | |||||
|
|
1,248
In-stock
|
Fairchild Semiconductor | MOSFET 400V N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 15 A | 300 mOhms | Enhancement | UniFET | |||||
|
|
1,456
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Chan MOSFET UniFET-II | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 530 mOhms | 5 V | 26 nC | UniFET | ||||||
|
|
GET PRICE |
182,100
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 65A 26mOhm 70nC Qg | 30 V | Through Hole | TO-220-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 65 A | 24 mOhms | 70 nC | Enhancement | ||||
|
|
1,121
In-stock
|
Fairchild Semiconductor | MOSFET 200V N-Channel PowerTrench | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 62 A | 27 mOhms | Enhancement | PowerTrench | |||||
|
|
GET PRICE |
7,650
In-stock
|
Infineon Technologies | MOSFET MOSFT 250V 60A 33mOhm 99nC Qg | 30 V | Through Hole | TO-220-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 60 A | 33 mOhms | 99 nC | Enhancement | ||||
|
|
1,127
In-stock
|
Fairchild Semiconductor | MOSFET UniFETII 500V 22A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 22 A | 220 mOhms | Enhancement | UniFET | |||||
|
|
886
In-stock
|
Fairchild Semiconductor | MOSFET SupreMOS 16A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 16 A | 170 mOhms | Enhancement | SupreMOS | |||||
|
|
476
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 600V Slow version | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 600 V | 37 A | 87 mOhms | 3.5 V | 114 nC | Enhancement | SuperFET II | ||||
|
|
981
In-stock
|
STMicroelectronics | MOSFET N-Ch 1200V 1.95 Ohm 6A Zener SuperMESH3 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 6 A | 2.4 Ohms | 34 nC | Enhancement | |||||
|
|
702
In-stock
|
Fairchild Semiconductor | MOSFET 800V 23A N-Channel SuperFET II MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 23 A | 220 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET II | |||
|
|
485
In-stock
|
STMicroelectronics | MOSFET 1500V 6Ohm 2.5A N-Channel | 30 V | Through Hole | TO-220-3 | - 50 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1500 V | 2.5 A | 9 Ohms | Enhancement | ||||||
|
|
605
In-stock
|
Fairchild Semiconductor | MOSFET 600V NChannel MOSFET SupreMOS | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 36 A | 90 mOhms | 4 V | 86 nC | SupreMOS | ||||
|
|
GET PRICE |
7,660
In-stock
|
STMicroelectronics | MOSFET N-Ch 500 Volt 17 Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 17 A | 270 mOhms | 85 nC | Enhancement | ||||
|
|
2,316
In-stock
|
STMicroelectronics | MOSFET N-Ch 800 Volt 4.3 A Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4.3 A | 2.4 Ohms | 32.4 nC | Enhancement | |||||
|
|
1,283
In-stock
|
STMicroelectronics | MOSFET N-Ch 600 Volt 13 Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13 A | 550 mOhms | 66 nC | Enhancement | |||||
|
|
766
In-stock
|
Fairchild Semiconductor | MOSFET 250V 28A N-CH UNIFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 51 A | 60 mOhms | Enhancement |
