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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
FQA6N90C_F109
1+
$2.650
10+
$2.250
100+
$1.800
500+
$1.580
RFQ
841
In-stock
Fairchild Semiconductor MOSFET 900V N-Ch Q-FET advance C-Series 30 V Through Hole TO-3PN-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 900 V 6 A 2.3 Ohms     Enhancement QFET
FQA8N90C_F109
1+
$2.430
10+
$2.060
100+
$1.650
500+
$1.450
RFQ
179
In-stock
Fairchild Semiconductor MOSFET 900V N-Channel 30 V Through Hole TO-3PN-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 900 V 8 A 1.9 Ohms     Enhancement QFET
FQA11N90C-F109
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RFQ
3,070
In-stock
Fairchild Semiconductor MOSFET 900V N-Ch Q-FET advance C-Series 30 V Through Hole TO-3PN-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 900 V 11 A 1.4 Ohms     Enhancement QFET
FQA9N90_F109
1+
$2.680
10+
$2.280
100+
$1.970
250+
$1.870
RFQ
430
In-stock
Fairchild Semiconductor MOSFET 900V N-Channel QFET 30 V Through Hole TO-3PN-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 900 V 8.6 A 1.3 Ohms     Enhancement QFET
FQA11N90_F109
1+
$2.870
10+
$2.440
100+
$2.110
250+
$2.010
RFQ
1
In-stock
Fairchild Semiconductor MOSFET 900V N-Channel QFET 30 V Through Hole TO-3PN-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 900 V 11.4 A 960 mOhms     Enhancement QFET
FQA9N90C
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RFQ
81,000
In-stock
Fairchild Semiconductor MOSFET 900V N-Channel QFET 30 V Through Hole TO-3PN-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 900 V 9 A 1.4 Ohms     Enhancement QFET
TK7J90E,S1E
1+
$2.700
10+
$2.170
100+
$1.740
250+
$1.650
RFQ
133
In-stock
Toshiba MOSFET PLN MOS 900V 2000m (VGS=10V) TO-3PN 30 V Through Hole TO-3PN-3 - 55 C + 150 C   1 Channel Si N-Channel 900 V 7 A 1.6 Ohms 4 V 32 nC Enhancement  
TK9J90E,S1E
1+
$3.170
10+
$2.550
100+
$2.320
250+
$2.100
RFQ
388
In-stock
Toshiba MOSFET PLN MOS 900V 1300m (VGS=10V) TO-3PN 30 V Through Hole TO-3PN-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 900 V 9 A 1 Ohms 4 V 46 nC Enhancement  
2SK3017(F)
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RFQ
Toshiba MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm 30 V Through Hole TO-3PN-3 - 55 C + 150 C   1 Channel Si N-Channel 900 V 8.5 A 1.25 Ohms     Enhancement  
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