- Manufacture :
- Mounting Style :
- Package / Case :
- Number of Channels :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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20
In-stock
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IXYS | MOSFET PHASE LEG MOSFET MOD HALF-BRIDGE 600V 1... | 30 V | Through Hole | ISOPLUS-i4-PAK-5 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 600 V | 12 A | 350 mOhms | 3 V | 58 nC | |||||
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31
In-stock
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IXYS | MOSFET 22.0 Amps 600 V 0.33 Ohm Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 350 mOhms | Enhancement | ||||||
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180
In-stock
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IXYS | MOSFET 600V 22A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 350 mOhms | 5.5 V | 58 nC | Enhancement | PolarHV, HiPerFET | |||
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200
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 9.7 A | 350 mOhms | 3 V | 25 nC | Enhancement | ||||
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GET PRICE |
16,200
In-stock
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IXYS | MOSFET 20 Amps 600V 0.35 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20 A | 350 mOhms | Enhancement | HyperFET | ||||
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VIEW | IXYS | MOSFET 20 Amps 600V 0.35 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20 A | 350 mOhms | Enhancement | HyperFET |
