- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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298
In-stock
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Toshiba | MOSFET N-Ch 600V 11.5A 35W DTMOSIV 890pF 25nC | 30 V | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 600 V | 11.5 A | 265 mOhms | 2.7 V to 3.7 V | 25 nC | Enhancement | |||||||
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323
In-stock
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Toshiba | MOSFET N-Ch 11.5A 110W FET 600V 890pF 25nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 11.5 A | 300 mOhms | 2.7 V to 3.7 V | 25 nC | Enhancement | |||||
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23,600
In-stock
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Toshiba | MOSFET DTMOSIV 600V 340mOhm 115A 100W 890pF 25nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11.5 A | 340 mOhms | 2.7 V to 3.7 V | 25 nC | DTMOSIV | ||||
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VIEW | Toshiba | MOSFET DTMOSIV 600V 340mOhm 11.5A 100W 890pF | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 11.5 A | 265 mOhms | 2.7 V to 3.7 V | 25 nC | DTMOSIV |
