MOSFET - Kaimeite

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7 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	FDB12N50FTM_WS		GET PRICE	PDF RFQ	2,160 In-stock	Fairchild Semiconductor	MOSFET 500V 11.5A 0.7Ohm N-Channel	30 V	SMD/SMT	TO-263-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	500 V	11.5 A	590 mOhms			Enhancement
	FDB12N50TM		GET PRICE	PDF RFQ	179,900 In-stock	Fairchild Semiconductor	MOSFET 500V N-CH MOSFET	30 V	SMD/SMT	TO-263-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	500 V	11.5 A	550 mOhms			Enhancement
	FDPF12N50FT		GET PRICE	PDF RFQ	626 In-stock	Fairchild Semiconductor	MOSFET 500V N-Channel	30 V	Through Hole	TO-220FP-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	500 V	11.5 A	700 mOhms			Enhancement	UniFET
	TK12A60W,S4VX		GET PRICE	PDF RFQ	298 In-stock	Toshiba	MOSFET N-Ch 600V 11.5A 35W DTMOSIV 890pF 25nC	30 V	Through Hole	TO-220FP-3				1 Channel	Si	N-Channel	600 V	11.5 A	265 mOhms	2.7 V to 3.7 V	25 nC	Enhancement
	TK12E60W,S1VX		GET PRICE	PDF RFQ	323 In-stock	Toshiba	MOSFET N-Ch 11.5A 110W FET 600V 890pF 25nC	30 V	Through Hole	TO-220-3	- 55 C	+ 150 C		1 Channel	Si	N-Channel	600 V	11.5 A	300 mOhms	2.7 V to 3.7 V	25 nC	Enhancement
	TK12P60W		GET PRICE	PDF RFQ	23,600 In-stock	Toshiba	MOSFET DTMOSIV 600V 340mOhm 115A 100W 890pF 25nC	30 V	SMD/SMT	TO-252-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	600 V	11.5 A	340 mOhms	2.7 V to 3.7 V	25 nC		DTMOSIV
	TK12Q60W,S1VQ		GET PRICE VIEW	PDF RFQ		Toshiba	MOSFET DTMOSIV 600V 340mOhm 11.5A 100W 890pF	30 V	Through Hole	TO-251-3	- 55 C	+ 150 C		1 Channel	Si	N-Channel	600 V	11.5 A	265 mOhms	2.7 V to 3.7 V	25 nC		DTMOSIV

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