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21 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
7,650
In-stock
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Infineon Technologies | MOSFET MOSFT 250V 60A 33mOhm 99nC Qg | 30 V | Through Hole | TO-220-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 60 A | 33 mOhms | 99 nC | Enhancement | |||||
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GET PRICE |
973
In-stock
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IXYS | MOSFET 500V 60A 0.1Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 60 A | 100 mOhms | 5 V | 96 nC | HyperFET | ||||||
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388
In-stock
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STMicroelectronics | MOSFET N-Ch 500 Volt 60 Amp | 30 V | Through Hole | Max247-3 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 60 A | 50 mOhms | Enhancement | ||||||
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GET PRICE |
113
In-stock
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IXYS | MOSFET 60 Amps 800V 0.14 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 60 A | 140 mOhms | 5 V | 250 nC | Enhancement | PolarHV, HiPerFET | |||
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GET PRICE |
58,200
In-stock
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Infineon Technologies | MOSFET MOSFT 150V 60A 32mOhm 60nC | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 60 A | 32 mOhms | 60 nC | ||||||||
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GET PRICE |
272
In-stock
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Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 32mOhms 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 60 A | 32 mOhms | 60 nC | Enhancement | |||||
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GET PRICE |
25
In-stock
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IXYS | MOSFET 60 Amps 500V | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 500 V | 60 A | 100 mOhms | 4.5 V | 610 nC | Enhancement | LinearL2 | ||||
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GET PRICE |
169
In-stock
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IR / Infineon | MOSFET MOSFT 150V 60A 32mOhm 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 60 A | 32 mOhms | 60 nC | Enhancement | |||||
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GET PRICE |
69
In-stock
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IXYS | MOSFET MOSFET 650V/60A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 60 A | 52 mOhms | 2.7 V | 107 nC | Enhancement | ||||
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GET PRICE |
39
In-stock
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IXYS | MOSFET 500V 60A 0.1Ohm PolarP3 Power MOSFET | 30 V | SMD/SMT | TO-268-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 60 A | 100 mOhms | 5 V | 96 nC | HyperFET | ||||||
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GET PRICE |
58
In-stock
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Microsemi | MOSFET Power MOSFET - CoolMOS | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 600 V | 60 A | 45 mOhms | 3 V | 150 nC | Enhancement | ||||||
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GET PRICE |
36
In-stock
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Microsemi | MOSFET Power MOSFET | 30 V | SMD/SMT | D3PAK-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 600 V | 60 A | 45 mOhms | 3 V | 150 nC | Enhancement | |||||
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GET PRICE |
33
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 60 A | 90 mOhms | 3 V | 280 nC | Enhancement | |||||
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GET PRICE |
56
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Si | N-Channel | 600 V | 60 A | 90 mOhms | 4 V | 280 nC | Enhancement | POWER MOS 8 | |||||
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GET PRICE |
31
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 60 A | 90 mOhms | 2.5 V | 280 nC | Enhancement | |||||
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GET PRICE |
8
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Si | N-Channel | 600 V | 60 A | 110 mOhms | 4 V | 280 nC | Enhancement | ||||||
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GET PRICE |
24
In-stock
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IXYS | MOSFET 60 Amps 550V 0.09 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 60 A | 88 mOhms | Enhancement | HyperFET | |||||
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GET PRICE |
2,970
In-stock
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Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 32mOhms 95nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 60 A | 32 mOhms | 95 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET 60 Amps 550V 0.09 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 60 A | 88 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 500V 60A 0.1Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-3P-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 60 A | 100 mOhms | 5 V | 96 nC | HyperFET | |||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 600 Volt 60 Amp | 30 V | Through Hole | Max247-3 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 60 A | 50 mOhms | Enhancement |