- Manufacture :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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973
In-stock
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IXYS | MOSFET 500V 60A 0.1Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 60 A | 100 mOhms | 5 V | 96 nC | HyperFET | ||||||
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69
In-stock
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IXYS | MOSFET MOSFET 650V/60A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 60 A | 52 mOhms | 2.7 V | 107 nC | Enhancement | ||||
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58
In-stock
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Microsemi | MOSFET Power MOSFET - CoolMOS | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 600 V | 60 A | 45 mOhms | 3 V | 150 nC | Enhancement | ||||||
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31
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 60 A | 90 mOhms | 2.5 V | 280 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET 60 Amps 550V 0.09 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 60 A | 88 mOhms | Enhancement | HyperFET |
