- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Qg - Gate Charge :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,360
In-stock
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Fairchild Semiconductor | MOSFET 300V N-Ch MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 14 A | 290 mOhms | Enhancement | ||||||
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701
In-stock
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Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 11.5 A | 290 mOhms | Enhancement | QFET | |||||
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GET PRICE |
476
In-stock
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Fairchild Semiconductor | MOSFET 300V N-Ch MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 14 A | 290 mOhms | Enhancement | ||||||
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GET PRICE |
966
In-stock
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Fairchild Semiconductor | MOSFET 300V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 9.1 A | 290 mOhms | Enhancement | QFET | |||||
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GET PRICE |
58
In-stock
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Fairchild Semiconductor | MOSFET UniFET2 600V | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 17 A | 290 mOhms | UniFET | ||||||
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24
In-stock
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IXYS | MOSFET 20 Amps 800V 0.29 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 20 A | 290 mOhms | 5 V | 150 nC | Enhancement | PolarHV, ISOPLUS247, HiPerFET | |||
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GET PRICE |
71
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 1000 V | 37 A | 290 mOhms | 4 V | 305 nC | Enhancement | POWER MOS 8 | ||||
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VIEW | STMicroelectronics | MOSFET N Ch 600V 0.26 Ohm 20A | 30 V | SMD/SMT | TO-263-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20 A | 290 mOhms | Enhancement | |||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 600 Volt 20 Amp | 30 V | SMD/SMT | TO-263-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20 A | 290 mOhms | Enhancement | |||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 600 Volt 20 Amp | 30 V | Through Hole | TO-220-3 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20 A | 290 mOhms | Enhancement |