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Manufacture :
Package / Case :
Packaging :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
TK31V60X,LQ
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RFQ
1,190
In-stock
Toshiba MOSFET DTMOSIV-High Speed 600V 88mVGS=10V) 30 V SMD/SMT DFN8x8-5 - 55 C + 150 C Reel 1 Channel Si N-Channel 600 V 30.8 A 78 mOhms 3.5 V 65 nC Enhancement  
TK31V60W,LVQ
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RFQ
950
In-stock
Toshiba MOSFET N-Ch DTMOSIV 600 V 240W 3000pF 30.8A 30 V SMD/SMT DFN8x8-5 - 55 C + 150 C Reel 1 Channel Si N-Channel 600 V 30.8 A 78 mOhms 2.7 V to 3.7 V 86 nC Enhancement  
IXFL82N60P
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RFQ
25
In-stock
IXYS MOSFET 82 Amps 600V 0.78 Ohm Rds 30 V Through Hole TO-264-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 82 A 78 mOhms 5 V 240 nC Enhancement PolarHV, ISOPLUS264, HiPerFET
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