1 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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950
In-stock
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Toshiba | MOSFET N-Ch DTMOSIV 600 V 240W 3000pF 30.8A | 30 V | SMD/SMT | DFN8x8-5 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 78 mOhms | 2.7 V to 3.7 V | 86 nC | Enhancement |
